50V GaN-on-SiC RF transistors for public safety radios
The transistors are input-matched for wideband applications and come in a 5 x 6mm package.
“Military personnel and first-responders must communicate across many channels and have reliable access to wideband capabilities such as data, video and GPS. The higher voltage of our new transistors at three different power levels ultimately translates into more powerful, more capable and more reliable radios,” said the company president of infrastructure products James Klein.
Higher voltage operation can increase output power, reduced current, allow more head-room and reduce the number of transistors in a system.
The products are featuring at the 2017 International Microwave Symposium in Honolulu this week (booth 1510).
|Product||P3dB (W)||PAE at 1GHz||Frequency||Package|
|QPD1004||25||73.2%||30-1200MHz||6 x 5mm|
|QPD1014||15||69.5%||30-1200MHz||6 x 5|