STMicroelectronics Boosts SiC MOSFET Capacity with Catania Expansion Set for H2 2026
STMicroelectronics has commenced the second phase of its Catania, Italy facility expansion, targeting a significant increase in Silicon Carbide (SiC) MOSFET production. This move is crucial for meeting escalating demand from the automotive and industrial sectors, with initial ramp-up expected by late 2026.
STMicroelectronics recently initiated the second phase of its substantial expansion project for the Silicon Carbide (SiC) MOSFET manufacturing facility in Catania, Italy. This strategic investment underscores the company's commitment to solidify its position as a leading supplier of SiC power semiconductors, a critical component for high-efficiency power conversion in electric vehicles (EVs), renewable energy infrastructure, and industrial power supplies. The expansion is designed to address the persistent growth in demand, which continues to outpace current industry production capabilities.
The Catania facility is a cornerstone of ST’s integrated SiC ecosystem, encompassing everything from SiC substrate development to final device manufacturing. The current expansion focuses on increasing wafer fabrication capacity for advanced SiC MOSFETs. Procurement engineers should anticipate an incremental increase in available supply towards late 2026, with full ramp-up projected to continue through 2027. This phased approach aims to mitigate potential supply chain disruptions often associated with large-scale factory commissioning.
Industry analysts have highlighted the significance of localized SiC production, especially given geopolitical considerations and the desire for more resilient supply chains within Europe. STMicroelectronics' investment not only bolsters its own manufacturing prowess but also contributes to the broader European semiconductor independence goals. The increased capacity is expected to alleviate some of the lead time pressures experienced by major automotive Tier 1 suppliers and industrial equipment manufacturers who rely heavily on SiC MOSFETs.
While the expansion promises improved supply, procurement strategies will still need to consider the long-term nature of SiC material readiness and processing complexity. The move by STMicroelectronics signals a proactive effort to preempt future supply bottlenecks for these high-performance discrete components, crucial for the ongoing energy transition. Buyers should continue to engage in long-term agreements and forecasting with their distributors to secure allocations as the new capacity comes online.