Results for B32(5000+)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| BYVB32-200 | VISHAY/威世 | 25+ | 90,000 | TO263 | |
| BYVB32-200HE3/81 | VISHAY | 24+ | 65,300 | TO263 | |
| BYVB32-200HE3/81 | Vishay(威世) | 25+ | 8,800 | N/A | |
| BYVB32-200HE3/81 | Vishay(威世) | 2511 | 11,800 | N/A | |
| BYVB32-200HE3/81 | VISHAY | 23+ | 50,000 | TO263 | |
| BYVB32-200 | VISHAY | 25+ | 320 | TO263 | |
| BYVB32-200HE3/81 | VISHAY/威世 | 23+ | 3,285 | TO263 | |
| BYVB32-200-31 | VISHAY | 23+24 | 29,840 | TO263 | |
| BYVB32-200-E3/81 | VISHAY | 17+ | 6,200 | TO263 | |
| BYVB32-200-E3/81 | VISHAY | 24+ | 64,580 | TO263 | |
| BYVB32-150 | VISHAY-威世 | 24+25+26+27+ | 78,800 | TO2633 | |
| BYVB32-200HE3/81 | VISHAY/威世 | 1318+ | 790 | TO263 | |
| BYVB32-50 | VISHAY-威世 | 24+25+26+27+ | 78,800 | TO2633 | |
| BYVB32-200-E3/81 | VISHAY/威世 | 2023+ | 6,893 | TO263 | |
| BYVB32-200/31 | VISHAY | 2025+ | 3,685 | TO263 | |
| BYVB32-200-E3/31 | VISHAY | 23+ | 1,086 | N/A | |
| BYVB32-50 | VISHAY | N/A | 9,800 | 原厂封装 | |
| BYVB32-200HE3/81 | VISHAY | 24+ | 9,800 | TO263 | |
| BYVB32-100-E3/45 | VISHAY | 25+ | 3,675 | TO263 | |
| BYVB32-100-E3/81 | VISHAY | 25+ | 3,675 | TO263 | |
| BYVB32 | VISHAY | 12+ | 15,000 | TO263 | |
| BYVB32-200HE3/81 | VISHAY/威世 | 25+ | 880,000 | DPakTO263AB | |
| BYVB32-200 | Vishay | 23+ | 7,300 | TO263 | |
| BYVB32-100-E3/81 | VISHAY/威世 | 23+ | 90,000 | TO263AB | |
| BYVB32-100-E3/81 | VI1 | 2447 | 100,500 | SMD | |
| BYVB32-100MOS(场效应管) | VISHAY/威世 | 23+ | 50,000 | TO263 | |
| BYVB32-100-E3/81 | VISHAY-威世 | 24+25+26+27+ | 9,328 | TO2633 | |
| BYVB32-100 | VISHAY/威世 | 23+ | 50,000 | TO263 | |
| BYVB32-100HE3/81 | VISHAY-威世 | 24+25+26+27+ | 9,328 | TO2633 | |
| BYVB32-100-E3/45 | VIS | 25+ | 66,880 | N/A | |
| BYVB32-100 | VISHAY | 22+ | 20,000 | TO263 | |
| BYVB32-100 | VISHAY/威世 | 23+ | 560 | TO263 | |
| BYVB32-100 | VISHAY | 25+ | 560 | TO263 | |
| BYVB32-100HE3/45 | VISHAY-威世 | 24+25+26+27+ | 9,328 | TO2633 | |
| BYVB32-100-E3/45 | VIS | 23+ | 7,300 | 2013+ | |
| BYVB32-100 | VISHAY | 12+ | 15,000 | TO263 | |
| BYVB32-100 | Vishay | 25+ | 66,880 | N/A | |
| BYVB32-100MOS(场效应管) | VISHAY/威世 | 23+ | 560 | TO263 | |
| BYVB32-200HE3/81 | VISHAY | 25+23+ | 16,580 | TO263 | |
| BYVB32-100 | VISHAY/威世 | 20+ | 32,500 | TO263 | |
| BYVB32-100 | VISHAY/威世 | 2022+ | 560 | TO263 | |
| BYVB32100E3/81 | Vishay Semiconductor Diodes Di | 22+ | 9,000 | TO263AB | |
| BYVB32-100 | VISHAY | 09+ | 562 | TO263 | |
| BYVB32-200HE3/81 | VISHAY | 21+ | 1,496 | TO263 | |
| BYVB3250E3/45 | Vishay Semiconductor Diodes Di | 22+ | 9,000 | TO263AB | |
| BYVB32-50HE3/81 | VISHAY-威世 | 24+25+26+27+ | 9,328 | TO2633 | |
| BYVB3250HE3/81 | Vishay Semiconductor Diodes Di | 22+ | 9,000 | TO263AB | |
| BYVB3250HE3/45 | Vishay Semiconductor Diodes Di | 22+ | 9,000 | TO263AB | |
| BYVB32-50-E3/81 | VIS | 24+ | 6,400 | N/A | |
| BYVB32-50HE3/45 | VISHAY-威世 | 24+25+26+27+ | 9,328 | TO2633 |