Results for BDFN2C071V(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| BDFN2C071V | 伯恩/NFSY | 2023+ | 60,000 | DFN1006N/A2L | |
| BDFN2C071V | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFN1006 | |
| BDFN2C071V | BORN/伯恩半导体 | 2026+ | 663,300 | DFN1006N/A2L | |
| BDFN2C071V | BORN/Cnnpchip/新晶微 | 26+ | 125,843 | DFN1006 | |
| BDFN2C071V | TINYSEMI/台半科技 | 25+ | 156,481 | SODN/A882 | |
| BDFN2C071V | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | DFN1006N/A2 | |
| BDFN2C071V | WENETE/韦能特 | 25+ | 120,000 | 0402 | |
| BDFN2C071V | BORN/伯恩半导体 | 25+ | 83,121 | FBP2C | |
| BDFN2C071V | LITESEMI/厉特 | 23+ | 300,905 | DFN1006 | |
| BDFN2C071V | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| BDFN2C071V | BORN/伯恩半导体 | 22+ | 357 | DFNN/A1006 | |
| BDFN2C071V | BORN/伯恩半导体 | 21+ | 63 | DFN1006 | |
| BDFN2C071V | 伯恩 | 2024+ | 17,500 | 402 | |
| BDFN2C071V | BORN伯恩 | 24+ | 60,000 | 0402 | |
| BDFN2C071V | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| BDFN2C071V | BORN/伯恩半导体 | 23+ | 10,000 | DFN1006 | |
| BDFN2C071V | ELECSUPER/静芯微 | 25+ | 180,000 | 0402DFN1006N/A2L | |
| BDFN2C071V | BORN/伯恩半导体 | 21+ | 1,405 | DFN1006 | |
| BDFN2C071V | BORN/伯恩半导体 | 25+ | 60,000 | FBP2C | |
| BDFN2C071V | MSV/萌盛微 | 25+ | 500,000 | 0402 | |
| BDFN2C071V | TSD/泰盛达 | 26+ | 30,000 | DFN1006 | |
| BDFN2C071V | WILLSEMI/韦尔 | N/A | 51,000 | DFN1006 | |
| BDFN2C071V | TechN/Apillar/科柱 | 23+ | 100,000 | DFN1006N/A2 | |
| BDFN2C071V | TSD/泰盛达 | 26+ | 30,000 | DFN1006 | |
| BDFN2C071V | BORN/伯恩半导体 | 24+25+ | 100,000 | 0402 | |
| BDFN2C071V | TSD/泰盛达 | 26+ | 30,000 | DFN1006 | |
| BDFN2C071V | SUPERESD/静芯微 | 25+ | 156,000 | FN1006N/A2L | |
| BDFN2C071V | BORN/伯恩半导体 | 2026+ | 236,600 | DFN1006N/A2L | |
| BDFN2C071V | BORN/伯恩半导体 | 26+ | 9,920 | DFN1006 | |
| BDFN2C071V | BORN/伯恩半导体 | 25+ | 1,000,000 | SMD2 |
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