Results for BDFN2C081V35(23)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| BDFN2C081V35 | SYFOREVER | 25+ | 60,600 | DFN1006 | |
| BDFN2C081V35 | TSD/泰盛达 | 26+ | 30,000 | DFN1006 | |
| BDFN2C081V35 | LITESEMI/厉特半导体 | 23+ | 999,000 | DFN1006 | |
| BDFN2C081V35 | BORN/伯恩半导体 | 23+ | 10,000 | DFNN/A2L | |
| BDFN2C081V35 | BORN/伯恩半导体 | 2026+ | 663,300 | DFN1006N/A2L | |
| BDFN2C081V35 | PLINGSEMIC/鹏领 | 23+ | 300,000 | DFN1006 | |
| BDFN2C081V35 | CNNPCHIP/新晶微 | 26+ | 335,600 | DFN1006 | |
| BDFN2C081V35 | BORN/伯恩半导体 | 2026+ | 236,600 | DFN1006N/A2L | |
| BDFN2C081V35 | ZXWILL | 2022+ | 52,300 | DFN1006 | |
| BDFN2C081V35 | BORN/伯恩半导体 | 24+25+ | 100,000 | 0402 | |
| BDFN2C081V35 | BORN/伯恩半导体 | 25+ | 6,630 | DFN1006N/A2L | |
| BDFN2C081V35 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| BDFN2C081V35 | SXSEMIWD | 2026+PB | 900,000 | DFN1006 | |
| BDFN2C081V35 | BORN伯恩 | 24+ | 60,000 | 0402 | |
| BDFN2C081V35 | TSD/泰盛达 | 26+ | 30,000 | DFN1006 | |
| BDFN2C081V35 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | DFN1006N/A2 | |
| BDFN2C081V35 | LITESEMI/厉特 | 23+ | 300,905 | DFN1006 | |
| BDFN2C081V35 | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| BDFN2C081V35 | BORN/Cnnpchip/新晶微 | 26+ | 125,833 | DFN1006 | |
| BDFN2C081V35 | BORN/伯恩半导体 | 24+ | 69,000 | DFNN/A2L | |
| BDFN2C081V35 | BORN/伯恩半导体 | 25+ | 83,121 | DFN1006N/A2L | |
| BDFN2C081V35 | TSD/泰盛达 | 26+ | 30,000 | DFN1006 | |
| BDFN2C081V35 | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFN1006 |
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