Results for BDFN2C151V35(27)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| BDFN2C151V35 | TSD/泰盛达 | 26+ | 30,000 | DFN1006 | |
| BDFN2C151V35 | TSD/泰盛达 | 26+ | 30,000 | DFN1006 | |
| BDFN2C151V35 | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| BDFN2C151V35 | BORN/伯恩半导体 | 24+ | 9,446 | DFNN/A1006 | |
| BDFN2C151V35 | BORN/伯恩半导体 | 25+ | 95,612 | DFN1006N/A2 | |
| BDFN2C151V35 | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFN1006 | |
| BDFN2C151V35 | WILLSEMI/韦尔 | N/A | 51,000 | DFN1006 | |
| BDFN2C151V35 | BORN/伯恩半导体 | 23+ | 10,000 | DFN1006 | |
| BDFN2C151V35 | BORN/伯恩半导体 | 24+25+ | 100,000 | 0402 | |
| BDFN2C151V35 | BORN/伯恩半导体 | 25+ | 1,000,000 | DFN1006 | |
| BDFN2C151V35 | BORN/伯恩半导体 | 24+ | 70,000 | DFN1006 | |
| BDFN2C151V35 | ZXWILL | 2022+ | 40,000 | DFN1006 | |
| BDFN2C151V35 | LITESEMI/厉特 | 23+ | 300,905 | DFN1006 | |
| BDFN2C151V35 | 伯恩/NFSY | 2023+ | 60,000 | DFN1006N/A2L | |
| BDFN2C151V35 | BORN/伯恩半导体 | 222+ | 140 | SOP | |
| BDFN2C151V35 | TINYSEMI/台半科技 | 25+ | 262,648 | DFNN/A1006 | |
| BDFN2C151V35 | CNNPCHIP/新晶微 | 26+ | 2,859,456 | DFN1006N/A2L | |
| BDFN2C151V35 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| BDFN2C151V35 | BORN/伯恩半导体 | 2026+ | 663,300 | DFN1006N/A2L | |
| BDFN2C151V35 | TSD/泰盛达 | 26+ | 30,000 | DFN1006 | |
| BDFN2C151V35 | BORN/伯恩半导体 | 25+ | 13,629 | DFN1006N/A2 | |
| BDFN2C151V35 | JGN/ASEMI/台湾金锆 | 26+ | 50,000 | DFN1006N/A2L | |
| BDFN2C151V35 | BORN/伯恩半导体 | 24+ | 9,446 | DFNN/A1006 | |
| BDFN2C151V35 | BORN伯恩 | 24+ | 60,000 | 0402 | |
| BDFN2C151V35 | BORN/伯恩半导体 | 2026+ | 236,600 | DFN1006N/A2L | |
| BDFN2C151V35 | BORN/Cnnpchip/新晶微 | 26+ | 125,813 | DFN1006 | |
| BDFN2C151V35 | SXSEMIWD | 2026+PB | 900,000 | DFN1006 |
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