Results for BST23C082V(27)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| BST23C082V | BORN/伯恩半导体 | 26+ | 76,890 | SOTN/A23 | |
| BST23C082V | TSD/泰盛达 | 26+ | 30,000 | SOT353 | |
| BST23C082V | CNNPCHIP/新晶微 | 25+ | 900,000 | SOTN/A23 | |
| BST23C082V | BORN/伯恩半导体 | 24+25+ | 100,000 | SOTN/A23 | |
| BST23C082V | 国产 | 25+ | 180,000 | SOTN/A23 | |
| BST23C082V | BORN/伯恩半导体 | 24+ | 2,024 | N/A | |
| BST23C082V | BORN/伯恩半导体 | 25+ | 120,000 | SOTN/A23 | |
| BST23C082V | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | SOTN/A23 | |
| BST23C082V | WILLSEMI/韦尔 | N/A | 51,000 | SOTN/A23 | |
| BST23C082V | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| BST23C082V | 伯恩/NFSY | 2023+ | 60,000 | SOT23 | |
| BST23C082V | BORN/伯恩半导体 | 23+ | 3,000 | SOTN/A23 | |
| BST23C082V | BORN/伯恩半导体 | 2026+ | 236,600 | SOTN/A23 | |
| BST23C082V | SXSEMIWD | 2026+PB | 900,000 | SOT23 | |
| BST23C082V | BORN/Cnnpchip/新晶微 | 26+ | 123,179 | SOTN/A23 | |
| BST23C082V | BORN/伯恩半导体 | 24+ | 69,000 | SOTN/A23 | |
| BST23C082V | ELECSUPER/静芯微 | 25+ | 60,000 | SOTN/A23 | |
| BST23C082V | TEN/AONG/拓能 | 2025+ | 1,803,000 | SOTN/A23 | |
| BST23C082V | BORN/伯恩半导体 | 2026+ | 663,300 | SOTN/A23 | |
| BST23C082V | BORN/伯恩半导体 | 2022+ | 53,200 | SOTN/A23 | |
| BST23C082V | CNNPCHIP/新晶微 | 2026 | 116,300 | SOTN/A23 | |
| BST23C082V | BORN伯恩 | 24+ | 60,000 | SOTN/A23 | |
| BST23C082V | XINGHEWEI | 25+ | 300,000 | SOTN/A23 | |
| BST23C082V | BORN/伯恩半导体 | 25+ | 3,000 | SOTN/A23 | |
| BST23C082V | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| BST23C082V | BORN/伯恩半导体 | 25+ | 100,000 | SOTN/A23 | |
| BST23C082V | BORN/伯恩半导体 | 24+ | 24 | N/A |
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