Results for CMD12P10(18)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| CMD12P10 | 昕晟微 | 22 | 100,000 | SOTN/A252 | |
| CMD12P10 | VBSEMI/微碧半导体 | 23+ | 52,388 | TO252 | |
| CMD12P10 | CMOS/场效应半导体 | 25+ | 68,500 | TO252 | |
| CMD12P10S | CMOS/场效应半导体 | 2025+ | 439 | TON/A252 | |
| CMD12P10S | CMOS/场效应半导体 | 25+ | 68,500 | TO252 | |
| CMD12P10S | NK/南科功率 | 2026+ROHS | 989,898 | TON/A252 | |
| CMD12P10S | PERSEMI | 22+ | 28,000 | TON/A252 | |
| CMD12P10S | ACTIVEBABY | 26+ | 28,000 | TON/A252 | |
| CMD12P10S | CMOS/场效应半导体 | 24+ | 51,000 | TON/A252 | |
| CMD12P10S | CMOS/场效应半导体 | 24+ | 10,200 | TON/A252 | |
| CMD12P10S | CMOS/场效应半导体 | 23+ | 39 | TON/A252 | |
| CMD12P10S | N/A | 22+ | 1 | NA | |
| CMD12P10S | NK/南科功率 | 2025+ | 360,000 | TON/A252 | |
| CMD12P10S | CMOS/场效应半导体 | 23+ | 39 | TON/A252 | |
| CMD12P10S | PERSEMI | 23+ | 52,388 | TON/A252 | |
| CMD12P10S | 昕晟微 | 22 | 100,000 | SOTN/A252 | |
| CMD12P10S | CMOS/场效应半导体 | 24+ | 23,000 | TON/A252 | |
| CMD12P10S | ACTIVE/台湾技领 | 24+ | 23,893 | TON/A252 |
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