Results for CMD50N06B(28)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| CMD50N06B | ACTIVEBABY | 26+ | 28,000 | TON/A252 | |
| CMD50N06B | VBSEMI/微碧半导体 | 25+ | 5,000 | TON/A252 | |
| CMD50N06B | CMD | 16+ | 800 | TON/A252 | |
| CMD50N06B | CMOS/场效应半导体 | 21+ | 25,000 | TON/A252 | |
| CMD50N06B | CMOS/场效应半导体 | 20+ | 2,010 | TON/A252 | |
| CMD50N06B | CMOS/场效应半导体 | 25+ | 68,500 | TO252 | |
| CMD50N06B | FAIRCHILD/仙童 | 25+ | 221,121 | TON/A252 | |
| CMD50N06B | PERSEMI | 22+ | 28,000 | TON/A252 | |
| CMD50N06B | CMOS/场效应半导体 | 25+ | 20,000 | TON/A252 | |
| CMD50N06B | CMOS/场效应半导体 | 23+ | 10,000 | TON/A252 | |
| CMD50N06B | NK/南科功率 | 2025+ | 360,000 | TON/A252 | |
| CMD50N06B | CMD | 17+ | 500 | TON/A252 | |
| CMD50N06B | CMD | 21+ | 66,666 | TON/A252 | |
| CMD50N06B | 昕晟微 | N/A | 200,000 | TO252TO251 | |
| CMD50N06B | CMOS/场效应半导体 | 17+ | 275 | TON/A252 | |
| CMD50N06B | CMOS/场效应半导体 | 17+ | 275 | TON/A252 | |
| CMD50N06B | ACTIVE/台湾技领 | 24+ | 23,893 | TON/A252 | |
| CMD50N06B | 进口 | 16+ | 5,000 | TON/A220+TON/A247+TON/A3P+ | |
| CMD50N06B | CMOS/场效应半导体 | 23+ | 9,000 | TON/A252 | |
| CMD50N06B | CMOS/场效应半导体 | 2025+ | 288 | TON/A252 | |
| CMD50N06B | CMD | 2516 | 138,094 | TON/A252 | |
| CMD50N06B | CMOS/场效应半导体 | 21+ | 480 | TON/A252 | |
| CMD50N06B | TOOHONG | N/A | 10,000 | N/A | |
| CMD50N06B | NK/南科功率 | 2026+ROHS | 989,898 | TON/A252 | |
| CMD50N06B | CMOS/场效应半导体 | 24+ | 11,000 | TON/A252 | |
| CMD50N06B | CMOS/场效应半导体 | 16+ | 8 | TO252 | |
| CMD50N06B | CMD | 1725 | 343 | TON/A252 | |
| CMD50N06B | CENERAL | 25+ | 46,000 | TON/A252 |
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