Results for CUS08F30(35)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| CUS08F30 | TOSHIBA/东芝 | 2025+ | 122,556 | USC | |
| CUS08F30 | DOWOSEMI/东沃电子 | 26+ | 6,039 | SODN/A323 | |
| CUS08F30 | TOSHIBA/东芝 | 21+ | 30,000 | US2H | |
| CUS08F30 | TOSHIBA/东芝 | 17+ | 280 | SODN/A323 | |
| CUS08F30 | SXSEMIWD瞬芯 | 2025+PB | 900,000 | SOD523 | |
| CUS08F30 | SK/森浦科 | 24+ | 38,610 | SODN/A323 | |
| CUS08F30 | TOSHIBA/东芝 | 24+PB | 1,065 | SODN/A323 | |
| CUS08F30 | RC | 26+ | 188,000 | SODN/A323 | |
| CUS08F30 | WENETE/韦能特 | 25+ | 120,000 | SOD323 | |
| CUS08F30 | TOSHIBA/东芝 | 24+ | 99,999 | USC | |
| CUS08F30 | TOSHIBA/东芝 | 24+ | 46,700 | SODN/A323 | |
| CUS08F30 | TOSHIBA/东芝 | 25+PB | 42,000 | USC | |
| CUS08F30 | TOSHIBA/东芝 | 25+ | 15,000 | SODN/A323 | |
| CUS08F30 | TOSHIBA/东芝 | 2014+PB | 12,500 | USC | |
| CUS08F30 | TOSHIBA/东芝 | 25+ | 27,000 | SODN/A323 | |
| CUS08F30 | TOSHIBA/东芝 | 2022+ | 53,200 | USC | |
| CUS08F30 | MSV/萌盛微 | 26+ | 360,000 | SOD323 | |
| CUS08F30 | TOSHIBA/东芝 | 2025+ | 122,556 | USC | |
| CUS08F30 | TOSHIBA/东芝 | 24+PB | 1,065 | SODN/A323 | |
| CUS08F30 | TOSHIBA/东芝 | 25+PB | 42,000 | USC | |
| CUS08F30 | TOSHIBA/东芝 | 2024+PB | 15,000 | USC | |
| CUS08F30 | TOSHIBA/东芝 | 2024+PB | 42,000 | USC | |
| CUS08F30 | SY/江苏顺烨 | 25+ | 3,000 | SODN/A323 | |
| CUS08F30 | TOSHIBA/东芝 | 1620+ | 132,000 | SODN/A323N/A2 | |
| CUS08F30 | TOSHIBA/东芝 | 25+ | 61,600 | SODN/A323 | |
| CUS08F30 | CNNPCHIP/新晶微 | 26+ | 35,465 | SODN/A323 | |
| CUS08F30 | TOSHIBA/东芝 | 24+PB | 1,065 | SODN/A323 | |
| CUS08F30 | JGN/ASEMI/台湾金锆 | 26+ | 50,000 | SODN/A323 | |
| CUS08F30 | TOSHIBA/东芝 | 24+PB | 1,065 | SODN/A323 | |
| CUS08F30 | SXSEMIWD | 2026+PB | 900,000 | SOD523 | |
| CUS08F30H3F | TOSHIBA/东芝 | 25+ | 83,121 | SODN/A323 | |
| CUS08F30H3F | Toshiba Semiconducto | 26+ | 332,520 | SCN/A76SODN/A323 | |
| CUS08F30H3F | TOSHIBA/东芝 | 25+ | 267,800 | SODN/A323 | |
| CUS08F30H3F | TOSHIBA/东芝 | 21+ | 30,000 | N/A | |
| CUS08F30H3F | TOSHIBA/东芝 | 2022 | 2,000 | SODN/A323 |
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