Results for D12V0H1U2LP1610(43)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| D12V0H1U2LP1610 | DIODES/美台 | 22+ | 300,000 | UN/ADFN1610N/A2(TypeB) | |
| D12V0H1U2LP1610 | DIODES/美台 | 24+ | 82,024 | DFN1610 | |
| D12V0H1U2LP1610 | DIODES/美台 | 25+ | 90,000 | DFN1610 | |
| D12V0H1U2LP1610 | TSD/泰盛达 | 26+ | 30,000 | UN/ADFN1608N/A | |
| D12V0H1U2LP1610 | DIODES/美台 | 24+ | 200,000 | DFN1610 | |
| D12V0H1U2LP1610 | PLINGSEMIC/鹏领 | 23+ | 300,000 | UN/ADFN1610N/A2 | |
| D12V0H1U2LP1610 | LITESEMI/厉特 | 22+ | 30,000 | UN/ADFN1610N/A2 | |
| D12V0H1U2LP1610 | TSD/泰盛达 | 26+ | 30,000 | UN/ADFN1610N/A | |
| D12V0H1U2LP1610 | SXSEMIWD | 2026+PB | 900,000 | UN/ADFN1610N/A2 | |
| D12V0H1U2LP1610 | TSD/泰盛达 | 26+ | 30,000 | UN/ADFN1610N/A | |
| D12V0H1U2LP1610 | PLINGSEMIC/鹏领 | 25+ | 300,000 | UN/ADFN1610N/A2 | |
| D12V0H1U2LP1610 | LITESEMI/厉特半导体 | 23+ | 999,000 | UN/ADFN1610N/A2 | |
| D12V0H1U2LP1610 | ZXWILL | 2022+ | 52,300 | UN/ADFN1610N/A2 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 25+ | 86,541 | DFN1006N/A2 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 25+ | 10,000 | UDFN16102 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 2026+ | 119,090 | DFN1610 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 16+ | 7,042 | DFN1610N/A2 | |
| D12V0H1U2LP1610-7 | ST/意法 | 25+ | 4,980 | N/A | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 20+22+ | 14,221 | UN/ADFN1610N/A2 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | N/A | 6,000 | N/A | |
| D12V0H1U2LP1610-7 | WILLSEMI/韦尔 | N/A | 51,000 | DFN1006N/A2(SODN/A882) | |
| D12V0H1U2LP1610-7 | SK/森浦科 | 24+ | 63,904 | DFN1610N/A2 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 26+ | 158,000 | UN/ADFN1610N/A2 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 25+ | 900,000 | N/A | |
| D12V0H1U2LP1610-7 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1610N/A2L | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 2026+ | 663,300 | DFN1610N/A2L | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 23+ | 48,000 | DFN1006N/A2 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 2017+ | 12,000 | UN/ADFN1610N/A2(TypeB) | |
| D12V0H1U2LP1610-7 | XINGHEWEI | 25+ | 300,000 | DFN1610N/A2L | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 22+ | 45,000 | UDFN16102 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 22+ | 15,346 | X1N/ADFN1006 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 23+ | 9,000 | UN/ADFN1610N/A2 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 22+ | 15,346 | X1N/ADFN1006 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 22+ | 15,346 | X1N/ADFN1006 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 26+ | 300,000 | UN/ADFN1610N/A2 | |
| D12V0H1U2LP1610-7 | Diodes/Cnnpchip/新晶微 | 26+ | 220,333 | DFN1610N/A2L | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 2022+ | 53,200 | DFN1006N/A2 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 23+ | 22,412 | UN/ADFN1610N/A2 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 2533+ | 12,250 | MULL | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 25+ | 10,000 | UDFN16102 | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 25+ | 83,121 | DFN1006N/A2 | |
| D12V0H1U2LP1610-7 | 国产 | 26+ | 2,500 | N/B | |
| D12V0H1U2LP1610-7 | DIODES/美台 | 16+ | 2,000 | DFN |
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