Results for D3V3H1B2LP-7B(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| D3V3H1B2LP-7B | DIODES/美台 | 24+ | 490,000 | X1N/ADFN100 | |
| D3V3H1B2LP-7B | DIODES/美台 | 21+ | 128,000 | X1N/ADFN100 | |
| D3V3H1B2LP-7B | DIODES/美台 | 24+ | 200,000 | X1N/ADFN1006N/A2 | |
| D3V3H1B2LP-7B | DIODES/美台 | 2035 | 120,000 | X1N/ADFN1006 | |
| D3V3H1B2LP-7B | DIODES/美台 | 26+ | 332,520 | 0402(1006Metric) | |
| D3V3H1B2LP-7B | DIODES/美台 | 24+ | 360,000 | DFN1006 | |
| D3V3H1B2LP-7B | DIODES/美台 | 25+ | 200,000 | X1DFN10062 | |
| D3V3H1B2LP-7B | DIODES/美台 | 2111 | 60,000 | X1N/ADFN1006 | |
| D3V3H1B2LP-7B | DIODES/美台 | 19+20+21+22+ | 164,656 | DFN1006N/A2 | |
| D3V3H1B2LP-7B | DIODES/美台 | 21+ | 98,000 | X1N/ADFN100 | |
| D3V3H1B2LP-7B | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | X1N/ADFN1006N/A2 | |
| D3V3H1B2LP-7B | DIODES/美台 | 20+21+ | 100,000 | DFN1006N/A2 | |
| D3V3H1B2LP-7B | DIODES/美台 | 26+ | 35,000 | D3V3H1B2LPN/A7B | |
| D3V3H1B2LP-7B | DIODES/美台 | 20+ | 90,000 | X1N/ADFN1006 | |
| D3V3H1B2LP-7B | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| D3V3H1B2LP-7B | DIODES/美台 | 25+ | 82,024 | X1N/ADFN1006N/A2 | |
| D3V3H1B2LP-7B | DIODES/美台 | 19+20+ | 150,000 | DFN1006N/A2 | |
| D3V3H1B2LP-7B | DIODES/美台 | 2026+ | 236,600 | DFN1006N/A2L | |
| D3V3H1B2LP-7B | DIODES/美台 | 22+ | 96,371 | X1N/ADFN1006 | |
| D3V3H1B2LP-7B | DIODES/美台 | 25+ | 280,000 | X1DFNN/A2 | |
| D3V3H1B2LP-7B | CCSEMI/芯能圆 | 25+ | 1,890,000 | X1N/ADFN1006N/A2 | |
| D3V3H1B2LP-7B | DIODES/美台 | 22+ | 490,000 | N/A | |
| D3V3H1B2LP-7B | DIODES/美台 | 25+ | 90,000 | X1N/ADFN1006N/A2 | |
| D3V3H1B2LP-7B | DIODES/美台 | 25+ | 600,000 | N/A | |
| D3V3H1B2LP-7B | DIODES/美台 | 2111 | 99,999 | X1N/ADFN1006 | |
| D3V3H1B2LP-7B | DIODES/美台 | 26+ | 158,000 | X1N/ADFN1006N/A2 | |
| D3V3H1B2LP-7B | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| D3V3H1B2LP-7B | DIODES/美台 | 22+ | 96,371 | X1N/ADFN1006 | |
| D3V3H1B2LP-7B | DIODES/美台 | 25+ | 114,536 | DFN1006N/A2 | |
| D3V3H1B2LP-7B | DIODES/美台 | 2026+ | 663,300 | DFN1006N/A2L |
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