Results for DESD3V3S1BLP3(40)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| DESD3V3S1BLP3 | TSD/泰盛达 | 26+ | 30,000 | X3N/ADFN0603 | |
| DESD3V3S1BLP3 | PLINGSEMIC/鹏领 | 23+ | 300,000 | X3N/ADFN0603N/A2 | |
| DESD3V3S1BLP3 | TSD/泰盛达 | 26+ | 30,000 | X3N/ADFN0603 | |
| DESD3V3S1BLP3 | TSD/泰盛达 | 26+ | 30,000 | X3N/ADFN0603 | |
| DESD3V3S1BLP3 | ZXWILL | 2022+ | 52,300 | X3N/ADFN0603N/A2 | |
| DESD3V3S1BLP3 | DIODES/美台 | 22+ | 300,000 | X3N/ADFN0603N/A2 | |
| DESD3V3S1BLP3 | SXSEMIWD | 2026+PB | 900,000 | X3N/ADFN0603N/A2 | |
| DESD3V3S1BLP3 | CNNPCHIP/新晶微 | 2026+ | 335,600 | DFN0603 | |
| DESD3V3S1BLP3 | LITESEMI/厉特 | 23+ | 999,000 | X3N/ADFN0603N/A2 | |
| DESD3V3S1BLP3 | QDON/启迪半导体 | 25+ | 371,138 | X3N/ADFN0603N/A2 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 25+ | 900,000 | N/A | |
| DESD3V3S1BLP3-7 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | X3N/ADFN0603N/A2 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 22+ | 104,906 | DFN0603N/A2 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 25+ | 200,000 | X3DFN06032 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 22+ | 104,906 | DFN0603N/A2 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 20+ | 300,000 | X3N/ADFN0603N/A2 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 26+ | 158,000 | DFN0603 | |
| DESD3V3S1BLP3-7 | Diodes/Cnnpchip/新晶微 | 26+ | 999,000 | DFN0603 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 17+ | 58,034 | DFN | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 2026+ | 663,300 | DFN0603 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 25+ | 100,000 | X3DFNN/A2 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 22+ | 128,000 | X3N/ADFN0603N/A2 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 25+ | 66,850 | X3N/ADFN0603N/A2 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 2040+PBF | 104,359 | X3N/ADFN0603N/A2 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 26+ | 220,000 | N/A | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 25+ | 90,000 | DFN0603 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 19+20+21+22+ | 147,720 | DFN0603N/A2 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 22+ | 98,800 | X3N/ADFN0603N/A2 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 17+ | 78,034 | DFN | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 24+ | 200,000 | DFN0603 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 17+ | 84,034 | DFN | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 25+ | 61,600 | X3N/ADFN0603N/A2 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 2025+PB | 66,000 | X3N/ADFN0603N/A2 | |
| DESD3V3S1BLP3-7 | QNMICRO/全能微 | 25+ | 295,200 | DFN0603N/A2 | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 2026+ | 236,600 | DFN0603N/A2L | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 24+ | 600,000 | X3N/ADFN060 | |
| DESD3V3S1BLP3-7 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN0603N/A2L | |
| DESD3V3S1BLP3-7 | DIODES/美台 | 24+ | 82,024 | DFN0603 | |
| DESD3V3S1BLP3-7 | CNNPCHIP/新晶微 | 2026+ | 335,600 | DFN0603 | |
| DESD3V3S1BLP3-7 | XINGHEWEI | 25+ | 300,000 | DFN0603N/A2L |
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