Results for DS12C887(49)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| DS12C887 | DALLAS SEMICONDUCTOR | 20+ | 140,000 | DIP24N/A28 | |
| DS12C887 | DALLAS SEMICONDUCTOR | 0 | 30,381 | DIPN/A18L | |
| DS12C887 | MAXIM/美信 | 25+ | 52,880 | DIPN/A24 | |
| DS12C887 | Dallas(达拉斯) | 2423+ | 61,534 | N/A | |
| DS12C887 | DALLAS SEMICONDUCTOR | 25+ | 666,666 | DIP | |
| DS12C887 | MAXIM/美信 | 25+ | 52,880 | DIPN/A24 | |
| DS12C887 | DALLS | N/A | 18,766 | DIP18 | |
| DS12C887 | 高格芯/GGX/XJS/馨晋商 | 10+ | 1,000,000 | DIP | |
| DS12C887 | N/A | 25+ | 26,035 | EDIPN/A24 | |
| DS12C887 | DS | 22+ | 19,400 | DIP | |
| DS12C887 | DALLAS SEMICONDUCTOR | 01022+990+00+ | 30,381 | DIPN/A18L | |
| DS12C887 | DS | 26+ | 127,653 | NA | |
| DS12C887 | MAXIM/美信 | 25+ | 52,880 | DIPN/A24 | |
| DS12C887 | DALLAS SEMICONDUCTOR | 21+ | 22,500 | DIP | |
| DS12C887 | DS | 14+ | 35,780 | DIP | |
| DS12C887 | DALLAS SEMICONDUCTOR | 22+ | 18,850 | EDIPN/A24 | |
| DS12C887 | DALLAS SEMICONDUCTOR | 23+ | 50,000 | DIP | |
| DS12C887 | TOSHIBA/东芝 | 2011+ | 19,000 | DIP | |
| DS12C887 | DALLAS SEMICONDUCTOR | 2011+ | 49,000 | N/A | |
| DS12C887 | DALLAS SEMICONDUCTOR | 22+ | 18,850 | EDIPN/A24 | |
| DS12C887 | DALLAS SEMICONDUCTOR | 06+ | 25,640 | DIP SOP | |
| DS12C887 | DALLAS SEMICONDUCTOR | 08+ | 330,000 | DIP | |
| DS12C887 | DALLAS SEMICONDUCTOR | 19+ | 18,260 | DIP24 | |
| DS12C887 | DALLS | 18+ | 600,000 | DIP | |
| DS12C887 | DALLAS SEMICONDUCTOR | 2010 | 25,640 | DIPSOP | |
| DS12C887 | DS | 17+ | 53,688 | DIP | |
| DS12C887 | DS | 26+ | 60,000 | NA | |
| DS12C887 | DS | 2026+ | 388,888 | DIPN/A16 | |
| DS12C887 | DSLLAS | 08+ | 32,598 | DIP | |
| DS12C887 | MAXIM/美信 | 2446+ | 18,879 | DIP18 | |
| DS12C887+ | DALLAS SEMICONDUCTOR | 1046+ | 1 | DIP18 | |
| DS12C887A | DALLAS SEMICONDUCTOR | 2021+ | 1 | DIP | |
| DS12C887A | DALLAS SEMICONDUCTOR | 0418+ | 78 | DIP | |
| DS12C887A | DS | 2021+ | 5,800 | DIP | |
| DS12C887A | DALLAS SEMICONDUCTOR | 19+ | 18,260 | DIP24 | |
| DS12C887A | DS | 06+15+ | 2,650 | DIPN/A19 | |
| DS12C887A | DALLAS SEMICONDUCTOR | 12+ | 1,880 | DIP | |
| DS12C887A | DALLAS SEMICONDUCTOR | 20+ | 1,989 | DIP | |
| DS12C887A | DALLAS SEMICONDUCTOR | 03+ | 500 | DIP | |
| DS12C887A | DALLAS SEMICONDUCTOR | 06+ | 3,650 | DIP | |
| DS12C887A | DALLAS SEMICONDUCTOR | 0418+ | 284 | DIP | |
| DS12C887A | MAXIM/美信 | 1002 | 50 | EDIP24 | |
| DS12C887A | DALLAS SEMICONDUCTOR | 11+ | 167 | DIPN/A | |
| DS12C887A | ADI/亚德诺 | 22+ | 13 | DIP24 | |
| DS12C887A | ADI/亚德诺 | 17+ | 5 | DIP | |
| DS12C887A | DALLAS SEMICONDUCTOR | N/A | 167 | N/A | |
| DS12C887A | 0 | DS | 2,000 | DIP | |
| DS12C887A | DALLAS SEMICONDUCTOR | 1215+ | 1 | DIP19 | |
| DS12C887A | DALLAS SEMICONDUCTOR | 06+ | 2,211 | DIP |
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