Results for ESD5V0AE1(24)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESD5V0AE1 | LMSEMI/砺马 | 25+ | 89,722 | DFNWB0.60.3N/A2L | |
| ESD5V0AE1 | GRANDE/格兰德微 | 24+ | 800,000 | DFN0603N/A2L | |
| ESD5V0AE1 | CJ/长电 | 26+ | 3,000 | DFNWB0.60.3N/A2L | |
| ESD5V0AE1 | QDON/启迪半导体 | 25+ | 359,225 | DFNWB0.6×0.3N/A2L | |
| ESD5V0AE1 | TSD/泰盛达 | 26+ | 30,000 | DFNWB0.60.3N/A2L | |
| ESD5V0AE1 | CJ/长晶 | N/A | 3,000 | DFNWB0.60.3N/A2L | |
| ESD5V0AE1 | XINGHEWEI | 25+ | 300,000 | DFNWB0603N/A2L | |
| ESD5V0AE1 | TSD/泰盛达 | 26+ | 30,000 | DFNWB0.60.3N/A2L | |
| ESD5V0AE1 | CJ/长晶 | 25+ | 3,000 | DFNWB0.6x0.3N/A2L | |
| ESD5V0AE1 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | DFNWB0.60.3N/A2L | |
| ESD5V0AE1 | CJ/长晶/长电 | 2026+ | 663,300 | DFNWB0.620.32N/A2L(P0. | |
| ESD5V0AE1 | TSD/泰盛达 | 26+ | 30,000 | DFNWB0.60.3N/A2L | |
| ESD5V0AE1 | 江苏长电/长晶 | 2026+ | 60,000 | DFNWB0.60.3N/A2L | |
| ESD5V0AE1 | LITESEMI/CJ | 22+ | 30,000 | DFNWB0.60.3N/A2L | |
| ESD5V0AE1 | CJ | 26+ | 158,000 | DFNWB0.6x0.3N/A2L | |
| ESD5V0AE1 | CJ/长电 | 25+ | 10,000 | DFNWB0.60.3N/A2L | |
| ESD5V0AE1 | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFNWB0.6x0.3N/A2L | |
| ESD5V0AE1 | CJ | 2026+PB | 900,000 | DFNWB0.6X0.3 | |
| ESD5V0AE1 | CJ/Cnnpchip/新晶微 | 26+ | 122,255 | DFNWB0.620.32N/A2L(P0. | |
| ESD5V0AE1 | CJ/长晶 | 26+ | 5,652 | DFNWB0.60.3N/A2L | |
| ESD5V0AE1 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFNWB0.620.32N/A2L(P0. | |
| ESD5V0AE1 | CJ/长晶 | 2025+ | 60,000 | DFNWB0.60.3N/A2L | |
| ESD5V0AE1 | CJ/长晶/长电 | 2026+ | 236,600 | DFNWB0603N/A2L | |
| ESD5V0AE1 | CJ/长电 | 2018+ | 21,000 | DFNWB0.620.32N/A2L |
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