Results for ESDBE12VD1(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESDBE12VD1 | 台舟TECH PUBLIC | 26+ | 300,000 | SOD123FL | |
| ESDBE12VD1 | CJ | 24+PB | 69,000 | SODN/A123FL | |
| ESDBE12VD1 | ELECSUPER/静芯微 | 25+ | 135,000 | SODN/A123 | |
| ESDBE12VD1 | CJ | 26+ | 158,000 | SODN/A123FL | |
| ESDBE12VD1 | CJ | 24+PB | 69,000 | SODN/A123FL | |
| ESDBE12VD1 | PRISEMI/芯导 | 18+ | 3,000 | SODN/A123 | |
| ESDBE12VD1 | SXSEMIWD | 2026+PB | 900,000 | SOD123 | |
| ESDBE12VD1 | CJ | 24+PB | 69,000 | SODN/A123FL | |
| ESDBE12VD1 | TSD/泰盛达 | 26+ | 30,000 | SODN/A123FL | |
| ESDBE12VD1 | CJ/长晶 | 2026 | 3,000 | SODN/A123FL | |
| ESDBE12VD1 | CJ/长电 | 26+ | 3,000 | SODN/A123FL | |
| ESDBE12VD1 | CJ(江苏长电/长晶) | N/A | 3,000 | SODN/A123FL | |
| ESDBE12VD1 | CJ/长晶 | 25+ | 3,000 | SODN/A123FL | |
| ESDBE12VD1 | TINYSEMI/台半科技 | 25+ | 41,250 | SODN/A123FL | |
| ESDBE12VD1 | 台舟TECH PUBLIC | 26+ | 300,000 | SOD123FL | |
| ESDBE12VD1 | LMSEMI/砺马 | 25+ | 89,722 | SODN/A123FL | |
| ESDBE12VD1 | TSD/泰盛达 | 26+ | 30,000 | SODN/A123FL | |
| ESDBE12VD1 | N/A | 17+PBF | 8,888 | SMD | |
| ESDBE12VD1 | PRISEMI/芯导 | 18+ | 3,000 | SODN/A123 | |
| ESDBE12VD1 | CJ/长晶 | 2023+ | 60,000 | SODN/A123FL | |
| ESDBE12VD1 | XINGHEWEI | 25+ | 300,000 | SODN/A123FL | |
| ESDBE12VD1 | CJ | 24+PB | 69,000 | SODN/A123FL | |
| ESDBE12VD1 | LITESEMI/CJ | 22+ | 30,000 | SODN/A123FL | |
| ESDBE12VD1 | TEN/AONG/拓能 | 2025+ | 1,803,000 | SODN/A123FL | |
| ESDBE12VD1 | CJ/长晶 | 2025+ | 60,000 | SODN/A123FL | |
| ESDBE12VD1 | TSD/泰盛达 | 26+ | 30,000 | SODN/A123FL | |
| ESDBE12VD1 | 江苏长电/长晶 | 2026+ | 60,000 | SODN/A123FL | |
| ESDBE12VD1 | CJ | 24+PB | 69,000 | SODN/A123FL | |
| ESDBE12VD1 | CNNPCHIP/新晶微 | 25+ | 900,000 | SODN/A123 | |
| ESDBE12VD1 | CJ/长晶/长电 | 2026+ | 236,600 | SODN/A123FL |
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