Results for ESDBKV3V3D3(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESDBKV3V3D3 | JGN/ASEMI/台湾金锆 | 26+ | 50,000 | SODN/A323 | |
| ESDBKV3V3D3 | CJ/长电 | 25+ | 131,400 | SODN/A323 | |
| ESDBKV3V3D3 | MSKSEMI/美森科 | 26+ | 66,000 | SODN/A323 | |
| ESDBKV3V3D3 | CJ/长晶 | 2446+ | 21,873 | SODN/A323 | |
| ESDBKV3V3D3 | CJ | 25+ | 1,000,000 | SODN/A323 | |
| ESDBKV3V3D3 | 江苏长电/长晶 | 2026+ | 60,000 | SODN/A323 | |
| ESDBKV3V3D3 | TINYSEMI/台半科技 | 25+ | 112,548 | SODN/A323 | |
| ESDBKV3V3D3 | ELECSUPER/静芯微 | 25+ | 135,000 | SODN/A323 | |
| ESDBKV3V3D3 | CJ/长电 | 23+ | 900,000 | SOD323 | |
| ESDBKV3V3D3 | CJ/长晶/长电 | 2026+ | 663,300 | SODN/A323 | |
| ESDBKV3V3D3 | TEN/AONG/拓能 | 2025+ | 1,803,000 | SODN/A323 | |
| ESDBKV3V3D3 | XINGHEWEI | 25+ | 300,000 | SODN/A323 | |
| ESDBKV3V3D3 | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| ESDBKV3V3D3 | CJ/长晶 | 25+ | 60,000 | SODN/A323 | |
| ESDBKV3V3D3 | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| ESDBKV3V3D3 | CJ/长晶 | 2026 | 30,000 | SODN/A323 | |
| ESDBKV3V3D3 | CJ/长晶/长电 | 2026+ | 236,600 | SODN/A323 | |
| ESDBKV3V3D3 | CNNPCHIP/新晶微 | 26+ | 335,600 | SODN/A323 | |
| ESDBKV3V3D3 | CJ/Cnnpchip/新晶微 | 26+ | 121,250 | SODN/A323 | |
| ESDBKV3V3D3 | CJ | 2026+PB | 900,000 | SOD323 | |
| ESDBKV3V3D3 | CJ/长晶 | 2025+ | 60,000 | SODN/A323 | |
| ESDBKV3V3D3 | CNNPCHIP/新晶微 | 25+ | 900,000 | S0DN/A323 | |
| ESDBKV3V3D3 | CJ/长电 | 25+ | 588,000 | SODN/A323 | |
| ESDBKV3V3D3 | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| ESDBKV3V3D3 | CJ | 26+ | 158,000 | SODN/A323 | |
| ESDBKV3V3D3 | CJ/长电 | 2025+ | 21,000 | SODN/A323 | |
| ESDBKV3V3D3 | LITESEMI/CJ | 22+ | 30,000 | SODN/A323 | |
| ESDBKV3V3D3 | CJ/长电 | 22+ | 60,600 | SODN/A323 | |
| ESDBKV3V3D3 | LMSEMI/砺马 | 25+ | 89,722 | SODN/A323 | |
| ESDBKV3V3D3 | CJ/长晶 | 25+26+ | 100,000 | N/A |
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