Results for ESDBL12VA1(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESDBL12VA1 | MSKSEMI/美森科 | 26+ | 66,000 | DFN1006N/A2L | |
| ESDBL12VA1 | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2L | |
| ESDBL12VA1 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| ESDBL12VA1 | LEIDITECH/雷卯电子 | 2026+ | 236,600 | DFN1006N/A2L | |
| ESDBL12VA1 | CJ | 26+ | 158,000 | DFNWB1.0x0.6N/A2L | |
| ESDBL12VA1 | ELECSUPER/静芯微 | 25+ | 150,000 | DFN1006N/A2L | |
| ESDBL12VA1 | CJ/长晶 | 2025+ | 60,000 | DFN1006N/A2L | |
| ESDBL12VA1 | HXY MOSFET华轩阳电子 | 25+ | 68,000 | DFN1006N/A2L | |
| ESDBL12VA1 | CJ/长电 | 1928+ | 10,800 | DFN1006N/A2L | |
| ESDBL12VA1 | CJ/长晶 | 20+ | 5,600 | DFN1006N/A2L | |
| ESDBL12VA1 | RUIMEIKE/瑞美科 | 25+ | 10,000 | DFN1006N/A2L | |
| ESDBL12VA1 | CJ/长电 | 19+ | 6,584 | DFN1006N/A2L | |
| ESDBL12VA1 | LMSEMI/砺马 | 25+ | 89,722 | DFN1006N/A2L | |
| ESDBL12VA1 | LITESEMI/厉特 | 24+ | 300,000 | DFN1006N/A2L | |
| ESDBL12VA1 | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2L | |
| ESDBL12VA1 | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFNWB1.0x0.6N/A2L | |
| ESDBL12VA1 | SXSEMIWD | 2026+PB | 900,000 | DFN2 | |
| ESDBL12VA1 | WENETE/韦能特 | 25+ | 120,000 | DFNWB1.0X0.6N/A02L | |
| ESDBL12VA1 | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2L | |
| ESDBL12VA1 | CJ/长电 | 1928+ | 10,800 | DFN1006N/A2L | |
| ESDBL12VA1 | TINYSEMI/台半科技 | 24+ | 374,755 | DFNN/A1006 | |
| ESDBL12VA1 | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| ESDBL12VA1 | MSV/萌盛微 | 25+ | 500,000 | DFNWB1.0X0.6N/A02L | |
| ESDBL12VA1 | LEIDITECH/雷卯电子 | 2026+ | 663,300 | DFN1006N/A2L | |
| ESDBL12VA1 | LEIDITECH/雷卯电子 | 26+ | 95,580 | DFN1006N/A2L | |
| ESDBL12VA1 | CJ/长电 | 1928+ | 10,800 | DFN1006N/A2L | |
| ESDBL12VA1 | 江苏长电/长晶 | 2026+ | 60,000 | DFNWB1.00.6N/A2L | |
| ESDBL12VA1 | LEIDITECH/雷卯电子 | 22+ | 68,500 | DFN1006 | |
| ESDBL12VA1 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | DFN1006N/A2L | |
| ESDBL12VA1 | CJ/长电 | 2022+ | 53,200 | DFN1006 |
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