Results for ESDBL24VA1(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESDBL24VA1 | CJ/长电 | 25+ | 32,600 | DFN1006N/A2L | |
| ESDBL24VA1 | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFNWB1.0x0.6N/A2L | |
| ESDBL24VA1 | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2L | |
| ESDBL24VA1 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | DFN1006N/A2L | |
| ESDBL24VA1 | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| ESDBL24VA1 | CJ/ELECSUPER | 25+ | 135,000 | DFN1006N/A2L | |
| ESDBL24VA1 | SXSEMIWD瞬芯 | 2025+PB | 900,000 | DFN1006 | |
| ESDBL24VA1 | CJ/长晶 | 2025+ | 60,000 | DFN1006N/A2L | |
| ESDBL24VA1 | CJ/长晶 | 2026 | 20,000 | DFNWB1.0x0.6N/A2L | |
| ESDBL24VA1 | CJ/长晶/长电 | 2026+ | 663,300 | DFN1006N/A2L | |
| ESDBL24VA1 | JGN/ASEMI/台湾金锆 | 26+ | 120,000 | DFN1006N/A2L | |
| ESDBL24VA1 | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2L | |
| ESDBL24VA1 | GOODWORK/固得沃克 | 25+ | 30,000 | DFN1006N/A2L | |
| ESDBL24VA1 | HXY MOSFET华轩阳电子 | 25+ | 68,000 | DFN1006N/A2L | |
| ESDBL24VA1 | SXSEMIWD | 2026+PB | 900,000 | DFN1006 | |
| ESDBL24VA1 | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2L | |
| ESDBL24VA1 | MSKSEMI/美森科 | 26+ | 66,000 | DFN1006N/A2L | |
| ESDBL24VA1 | LMSEMI/砺马 | 25+ | 89,722 | DFN1006N/A2L | |
| ESDBL24VA1 | TINYSEMI/台半科技 | 25+ | 187,671 | DFNN/A1006 | |
| ESDBL24VA1 | CJ/长晶 | 26+ | 90,000 | DFNWB1.0N/A0.6N/A2L | |
| ESDBL24VA1 | CJ | 26+ | 158,000 | DFNWB1.0x0.6N/A2L | |
| ESDBL24VA1 | MSV/萌盛微 | 26+ | 500,000 | DFN1006 | |
| ESDBL24VA1 | WENETE/韦能特 | 25+ | 120,000 | DFN1006 | |
| ESDBL24VA1 | CJ/长晶 | 25+26+ | 100,000 | N/A | |
| ESDBL24VA1 | CJ/长晶 | 25+ | 20,000 | DFNWB1.0N/A0.6 | |
| ESDBL24VA1 | 江苏长电/长晶 | 2026+ | 60,000 | DFNWB1.00.6N/A2L | |
| ESDBL24VA1 | CJ/长晶 | 25+ | 10,000 | DFNWBN/A2L(1x0.6) | |
| ESDBL24VA1 | CJ/长电 | 20+ | 115,200 | SMD | |
| ESDBL24VA1 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| ESDBL24VA1 | LITESEMI/CJ | 22+ | 30,000 | DFN1006N/A2L |
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