Results for ESDBL3V3AE1(29)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESDBL3V3AE1 | CJ/长晶/长电 | 2026+ | 663,300 | DFN0603N/A2L | |
| ESDBL3V3AE1 | TSD/泰盛达 | 26+ | 30,000 | DFNWB0.60.3N/A2L | |
| ESDBL3V3AE1 | CJ | 26+ | 158,000 | DFNWB0.6x0.3N/A2L | |
| ESDBL3V3AE1 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN0603N/A2L | |
| ESDBL3V3AE1 | CJ/长晶 | 25+26+ | 100,000 | N/A | |
| ESDBL3V3AE1 | CJ/长电 | 25+ | 132,290 | DFNWB0.60.3N/A2L | |
| ESDBL3V3AE1 | SXSEMI/瞬芯半导体 | 2025+PB | 900,000 | DFN0603 | |
| ESDBL3V3AE1 | LMSEMI/砺马 | 25+ | 89,722 | DFNWB0.60.3N/A2L | |
| ESDBL3V3AE1 | CJ/长晶 | 23+ | 20,000 | DFN | |
| ESDBL3V3AE1 | WENETE/韦能特 | 25+ | 120,000 | DFN0603 | |
| ESDBL3V3AE1 | CJ/长晶/长电 | 2026+ | 236,600 | DFN0603N/A2L | |
| ESDBL3V3AE1 | CJ/ELECSUPER | 25+ | 45,000 | SODN/A923 | |
| ESDBL3V3AE1 | JGN/ASEMI/台湾金锆 | 25+ | 83,121 | DFN0603 | |
| ESDBL3V3AE1 | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFNWB0.6x0.3N/A2L | |
| ESDBL3V3AE1 | LITESEMI/CJ | 22+ | 30,000 | DFNWB0.60.3N/A2L | |
| ESDBL3V3AE1 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | DFNWB0.60.3N/A2L | |
| ESDBL3V3AE1 | TINYSEMI/台半科技 | 25+ | 259,114 | DFN0603 | |
| ESDBL3V3AE1 | CJ/长电 | 24+ | 14,850 | DFNWB0.6N/A0.3N/A2L | |
| ESDBL3V3AE1 | CJ/Cnnpchip/新晶微 | 26+ | 122,257 | DFNWB0.620.32N/A2L(P0. | |
| ESDBL3V3AE1 | TSD/泰盛达 | 26+ | 300,000 | DFN0603N/A2L | |
| ESDBL3V3AE1 | MSV/萌盛微 | 25+ | 500,000 | DFN0603 | |
| ESDBL3V3AE1 | 江苏长电/长晶 | 2024+ | 60,000 | DFNWB0.60.3N/A2L | |
| ESDBL3V3AE1 | CJ/长晶 | 2023+ | 60,000 | DFNWB0.60.3N/A2L | |
| ESDBL3V3AE1 | CJ/长晶 | 2025+ | 60,000 | DFNWB0.60.3N/A2L | |
| ESDBL3V3AE1 | CJ/长电 | 26+ | 334,542 | DFNWB | |
| ESDBL3V3AE1 | TSD/泰盛达 | 26+ | 30,000 | DFNWB0.60.3N/A2L | |
| ESDBL3V3AE1 | XINGHEWEI | 25+ | 300,000 | DFN0603N/A2L | |
| ESDBL3V3AE1 | QDON/启迪半导体 | 25+ | 359,313 | DFNWB0.6×0.3N/A2L | |
| ESDBL3V3AE1 | CJ | 20+ | 10,205 | SMD |
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