Results for ESDBL3V3C2(11)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESDBL3V3C2 | CJ/长晶 | 25+ | 3,000 | SOTN/A23 | |
| ESDBL3V3C2 | CJ/长电 | 26+ | 346,573 | SOTN/A23 | |
| ESDBL3V3C2 | CJ/Cnnpchip/新晶微 | 26+ | 123,251 | SOTN/A23 | |
| ESDBL3V3C2 | XINGHEWEI | 25+ | 300,000 | SOTN/A23 | |
| ESDBL3V3C2 | CJ/长晶 | N/A | 3,000 | SOTN/A23 | |
| ESDBL3V3C2 | CJ/长电 | 22+ | 60,600 | SOTN/A23 | |
| ESDBL3V3C2 | CJ/长晶/长电 | 2026+ | 236,600 | SOTN/A23 | |
| ESDBL3V3C2 | CNNPCHIP/新晶微 | 25+ | 900,000 | SOTN/A23 | |
| ESDBL3V3C2 | CJ/长电 | 26+ | 3,000 | SOTN/A23 | |
| ESDBL3V3C2 | CJ/长晶 | 24+ | 15,000 | SOTN/A23 | |
| ESDBL3V3C2 | CJ/长晶/长电 | 2026+ | 663,300 | SOTN/A23 |
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