Results for ESDBL7V0A1(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESDBL7V0A1 | SXSEMIWD | 2026+PB | 900,000 | DFN 2L | |
| ESDBL7V0A1 | CJ/长晶 | 2025+ | 60,000 | DFN1006N/A2L | |
| ESDBL7V0A1 | CJ/长晶 | 1815+ | 30,000 | DFN2L | |
| ESDBL7V0A1 | CJ/长电 | new | 1,000,000 | DFNWB1.00.6N/A02L | |
| ESDBL7V0A1 | CJ | 26+ | 158,000 | DFNWB1.0x0.6N/A2L | |
| ESDBL7V0A1 | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFNWB1.0x0.6N/A2L | |
| ESDBL7V0A1 | CJ/长电 | 25+ | 20,000 | DFN1006N/A2L | |
| ESDBL7V0A1 | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| ESDBL7V0A1 | CJ/长晶/长电 | 2026+ | 663,300 | DFN1006N/A2L | |
| ESDBL7V0A1 | CJ/长晶 | 25+ | 10,000 | DFNWB1.0x0.6N/A2L | |
| ESDBL7V0A1 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| ESDBL7V0A1 | CJ/长晶 | 21+ | 45,612 | DFN2 | |
| ESDBL7V0A1 | TSD/泰盛达 | 26+ | 300,000 | DFN1006N/A2L | |
| ESDBL7V0A1 | HXY MOSFET华轩阳电子 | 25+ | 68,000 | DFN1006N/A2L | |
| ESDBL7V0A1 | MSV/萌盛微 | 26+ | 500,000 | DFN1006N/A2L | |
| ESDBL7V0A1 | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2L | |
| ESDBL7V0A1 | CJ/长晶 | 25+ | 125,000 | DFNWB1.0x0.6N/A2L | |
| ESDBL7V0A1 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | DFN1006N/A2L | |
| ESDBL7V0A1 | 江苏长电/长晶 | 2026+ | 60,000 | DFN1006N/A2L | |
| ESDBL7V0A1 | MSKSEMI/美森科 | 26+ | 66,000 | DFN1006N/A2L | |
| ESDBL7V0A1 | CJ/长晶/长电 | 2026+ | 236,600 | DFN1006N/A2L | |
| ESDBL7V0A1 | LMSEMI/砺马 | 25+ | 89,722 | DFN1006N/A2L | |
| ESDBL7V0A1 | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2L | |
| ESDBL7V0A1 | CJ/长晶 | 25+ | 3,000 | DFNWB1.0x0.6N/A2L | |
| ESDBL7V0A1 | SXSEMIWD瞬芯 | 2025+PB | 900,000 | DFN 2L | |
| ESDBL7V0A1 | TINYSEMI/台半科技 | 25+ | 201,591 | SOD882 | |
| ESDBL7V0A1 | CJ/长电 | 23+ | 9,964 | SMD | |
| ESDBL7V0A1 | LITESEMI/CJ | 22+ | 30,000 | DFN1006N/A2L | |
| ESDBL7V0A1 | CJ/长晶 | N/A | 3,000 | DFNWB1006N/A2L | |
| ESDBL7V0A1 | CJ/长电 | 26+ | 3,000 | DFNWB1006N/A2L |
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