Results for ESDBM12VA1(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESDBM12VA1 | SXSEMIWD瞬芯 | 2025+PB | 900,000 | DFN1006 | |
| ESDBM12VA1 | LMSEMI/砺马 | 25+ | 89,722 | DFN1006N/A2L | |
| ESDBM12VA1 | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006N/A2 | |
| ESDBM12VA1 | Semiteh elec | 26+ | 268,589 | DFN1006N/A2L | |
| ESDBM12VA1 | CJ/长晶 | 25+26+ | 100,000 | N/A | |
| ESDBM12VA1 | CJ/长电 | 2022+ | 40,000 | DFN1006N/A2 | |
| ESDBM12VA1 | MSKSEMI/美森科 | 26+ | 66,000 | DFN1006N/A2L | |
| ESDBM12VA1 | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFNWB1.0x0.6N/A2L | |
| ESDBM12VA1 | CJ/长晶 | 25+ | 3,000 | DFNWB1.0x0.6N/A2L | |
| ESDBM12VA1 | PRISEMI/芯导 | 18+ | 10,000 | DFN | |
| ESDBM12VA1 | CJ/长电/长晶 | 25+ | 10,000 | DFNNWB0.6N/A0.6N/A2L | |
| ESDBM12VA1 | CJ/长晶/长电 | 2026+ | 236,600 | DFN1006N/A2L | |
| ESDBM12VA1 | WENETE/韦能特 | 25+ | 120,000 | DFN1006 | |
| ESDBM12VA1 | ESD | 2322+ | 9,292 | DFN1006N/A02L | |
| ESDBM12VA1 | 江苏长电/长晶 | 2026+ | 60,000 | DFNWB1.00.6N/A2L | |
| ESDBM12VA1 | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| ESDBM12VA1 | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006N/A2 | |
| ESDBM12VA1 | CJ | 26+ | 158,000 | DFNWB1.0x0.6N/A2L | |
| ESDBM12VA1 | LITESEMI/CJ | 22+ | 30,000 | DFN1006N/A2L | |
| ESDBM12VA1 | CJ | 18+ | 30,000 | DFN1006N/A2L | |
| ESDBM12VA1 | ESD | 2322+ | 9,292 | DFN1006N/A02L | |
| ESDBM12VA1 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | DFN1006N/A2L | |
| ESDBM12VA1 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| ESDBM12VA1 | CJ/长电 | 25+ | 132,290 | DFN1006N/A2L | |
| ESDBM12VA1 | CJ/长晶 | 2025+ | 60,000 | DFN1006N/A2L | |
| ESDBM12VA1 | TSD/泰盛达 | 26+ | 30,000 | X1N/ADFN1006N/A2 | |
| ESDBM12VA1 | CJ/长电 | 2020+ | 635,200 | DFN1006N/A2 | |
| ESDBM12VA1 | CJ | 19+ | 20,000 | DFN1006N/A0 | |
| ESDBM12VA1 | RUIMEIKE/瑞美科 | 25+ | 1,000,000 | DFN1006N/A2L | |
| ESDBM12VA1 | MSV/萌盛微 | 26+ | 500,000 | DFN1006 |
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