Results for ESDBM24VD3(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESDBM24VD3 | CJ/长晶 | 25+ | 3,000 | SODN/A323 | |
| ESDBM24VD3 | CJ(江苏长电/长晶) | 26+ | 6,000 | NA | |
| ESDBM24VD3 | CJ/长晶 | 2025+ | 60,000 | SODN/A323 | |
| ESDBM24VD3 | LITESEMI/CJ | 22+ | 30,000 | SODN/A323 | |
| ESDBM24VD3 | CJ/长晶 | 26 | 15,000 | SODN/A323 | |
| ESDBM24VD3 | MSKSEMI/美森科 | 26+ | 66,000 | SODN/A323 | |
| ESDBM24VD3 | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| ESDBM24VD3 | TEN/AONG/拓能 | 2025+ | 1,803,000 | SODN/A323 | |
| ESDBM24VD3 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | SODN/A323 | |
| ESDBM24VD3 | SXSEMIWD | 2026+PB | 900,000 | SOD323 | |
| ESDBM24VD3 | CJ/长晶 | N/A | 3,000 | SODN/A323 | |
| ESDBM24VD3 | LMSEMI/砺马 | 25+ | 89,722 | SODN/A323 | |
| ESDBM24VD3 | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| ESDBM24VD3 | 江苏长电/长晶 | 2026+ | 60,000 | SODN/A323 | |
| ESDBM24VD3 | XINGHEWEI | 25+ | 300,000 | SODN/A323 | |
| ESDBM24VD3 | CJ/长电 | 2022+ | 635,200 | SOD323 | |
| ESDBM24VD3 | CJ | 26+ | 158,000 | SODN/A323 | |
| ESDBM24VD3 | TINYSEMI/台半科技 | 24+ | 125,118 | SODN/A323 | |
| ESDBM24VD3 | CJ/长电 | 26+ | 3,000 | SODN/A323 | |
| ESDBM24VD3 | MSV/萌盛微 | 25+ | 500,000 | SOD323 | |
| ESDBM24VD3 | WENETE/韦能特 | 25+ | 120,000 | SOD323 | |
| ESDBM24VD3 | HXY MOSFET华轩阳电子 | 25+ | 68,000 | SODN/A323 | |
| ESDBM24VD3 | CJ/长电 | 25+ | 21,500 | SODN/A323 | |
| ESDBM24VD3 | CJ/长电 | 2020+ | 635,200 | SOD323 | |
| ESDBM24VD3 | CJ/长晶 | 25+ | 185,800 | SODN/A323 | |
| ESDBM24VD3 | CJ/长晶 | 2026 | 6,000 | SODN/A323 | |
| ESDBM24VD3 | ELECSUPER/静芯微 | 25+ | 33,000 | SODN/A323 | |
| ESDBM24VD3 | CJ/长晶/长电 | 2026+ | 663,300 | SODN/A323 | |
| ESDBM24VD3 | CNNPCHIP/新晶微 | 25+ | 900,000 | S0DN/A323 | |
| ESDBM24VD3 | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 |
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