Results for ESDBM3V3A1(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESDBM3V3A1 | SXSEMIWD | 2026+PB | 900,000 | DFN1006 | |
| ESDBM3V3A1 | CJ/长电长晶 | 23+ | 10,000 | DFN1006N/A2L | |
| ESDBM3V3A1 | CJ/长晶 | 26+ | 275,680 | DFNWB1.0x0.6N/A2L | |
| ESDBM3V3A1 | CJ/长晶 | 25+ | 86,700 | DFN1006N/A2L | |
| ESDBM3V3A1 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| ESDBM3V3A1 | CJ/长晶 | 26+ | 30,000 | DFN | |
| ESDBM3V3A1 | CJ/长晶 | N/A | 3,000 | DFNWB1006N/A2L | |
| ESDBM3V3A1 | CJ/长晶 | 25+ | 10,000 | DFNWBN/A2L(1.0x0.6) | |
| ESDBM3V3A1 | LITESEMI/CJ | 22+ | 30,000 | DFN1006N/A2L | |
| ESDBM3V3A1 | LMSEMI/砺马 | 25+ | 89,722 | DFN1006N/A2L | |
| ESDBM3V3A1 | CJ/长晶/长电 | 2026+ | 663,300 | DFN1006N/A2L | |
| ESDBM3V3A1 | CJ/长电 | 25+ | 132,290 | DFN1006N/A2L | |
| ESDBM3V3A1 | CJ | 26+ | 158,000 | DFNWB1.0x0.6N/A2L | |
| ESDBM3V3A1 | HXY MOSFET华轩阳电子 | 25+ | 68,000 | DFN1006N/A2L | |
| ESDBM3V3A1 | MSKSEMI/美森科 | 26+ | 66,000 | DFN1006N/A2L | |
| ESDBM3V3A1 | CJ/长电 | 2020+ | 635,200 | DFN1006N/A2 | |
| ESDBM3V3A1 | CJ/长晶 | 25+ | 20,000 | DFNWBN/A2L(1.0X0.6) | |
| ESDBM3V3A1 | 长晶/长电/CJ | 2023 | 488,000 | DFNWB1.00.6N/A02L | |
| ESDBM3V3A1 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | DFN1006N/A2L | |
| ESDBM3V3A1 | CJ/长晶 | 25+ | 3,000 | DFNWB1.0x0.6N/A2L | |
| ESDBM3V3A1 | CJ/长晶 | 2025+ | 60,000 | DFN1006N/A2L | |
| ESDBM3V3A1 | CJ/长电 | 20+ | 4,840 | DFN1006N/A2 | |
| ESDBM3V3A1 | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2L | |
| ESDBM3V3A1 | CJ/长电长晶 | 23+ | 36,000 | DFN1006N/A2L | |
| ESDBM3V3A1 | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| ESDBM3V3A1 | 江苏长电/长晶 | 2026+ | 60,000 | DFNWB1.00.6N/A2L | |
| ESDBM3V3A1 | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFNWB1.0x0.6N/A2L | |
| ESDBM3V3A1 | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2L | |
| ESDBM3V3A1 | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2L | |
| ESDBM3V3A1 | CJ(江苏长电/长晶) | 26+ | 20,000 | DFNWBN/A2L(1.0x0.6) |
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