Results for ESDBVD5V0C2(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESDBVD5V0C2 | CJ/长晶 | 2026 | 3,000 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ/长晶/长电 | 2026+ | 236,600 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ(江苏长电/长晶) | 24+ | 3,000 | SOTN/A23 | |
| ESDBVD5V0C2 | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ/长电 | 26+ | 3,000 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ/长电 | 25+ | 132,290 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ/长晶 | 24+ | 15,000 | SOTN/A23 | |
| ESDBVD5V0C2 | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| ESDBVD5V0C2 | XINGHEWEI | 25+ | 300,000 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ/长晶/长电 | 2026+ | 663,300 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ/长电 | 22+ | 60,600 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ/长电 | 25+ | 66,000 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ/长晶 | 25+ | 3,000 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ/长电 | 25+ | 83,121 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ/ELECSUPER | 25+ | 135,000 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ/Cnnpchip/新晶微 | 26+ | 125,897 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ/长晶 | 25+26+ | 100,000 | N/A | |
| ESDBVD5V0C2 | SXSEMIWD瞬芯 | 2025+PB | 900,000 | SOT23 | |
| ESDBVD5V0C2 | CJ/长晶 | 2025+ | 60,000 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ/长电 | 26+ | 311,123 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ/长晶 | 24+ | 196 | SOT23 | |
| ESDBVD5V0C2 | LITESEMI/CJ | 22+ | 30,000 | SOTN/A23 | |
| ESDBVD5V0C2 | TEN/AONG/拓能 | 2025+ | 1,803,000 | SOTN/A23 | |
| ESDBVD5V0C2 | MSKSEMI/美森科 | 26+ | 66,000 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ/长晶 | N/A | 3,000 | SOTN/A23 | |
| ESDBVD5V0C2 | LMSEMI/砺马 | 25+ | 89,722 | SOTN/A23 | |
| ESDBVD5V0C2 | CJ | 26+ | 158,000 | SOTN/A23 | |
| ESDBVD5V0C2 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | SOTN/A23 | |
| ESDBVD5V0C2 | TSD/泰盛达 | 26+ | 30,000 | SOTN/A143 | |
| ESDBVD5V0C2 | 江苏长电/长晶 | 2024+ | 60,000 | SOTN/A23 |
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