Results for ESDSLC3V3LB(45)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESDSLC3V3LB | YANGJIE/扬杰科技 | 26+ | 300,000 | DFN1006N/A2L | |
| ESDSLC3V3LB | YANGJIE/扬杰科技 | 25+ | 452,000 | DFN1006N/A2L | |
| ESDSLC3V3LB | YANGJIE/扬杰科技 | 24+23+ | 30,000 | DFN1006N/A2L | |
| ESDSLC3V3LB | MCC/美微科 | 22+ | 30,000 | DFN1006N/A2 | |
| ESDSLC3V3LB | QDON/启迪半导体 | 25+ | 370,901 | DFN1006N/A2L | |
| ESDSLC3V3LB | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2 | |
| ESDSLC3V3LB | MCC/Cnnpchip/新晶微 | 26+ | 126,321 | DFN1006N/A2L | |
| ESDSLC3V3LB | PLINGSEMIC/鹏领 | 23+ | 300,000 | DFN2 | |
| ESDSLC3V3LB | YANGJIE/扬杰科技 | 23+ | 30,000 | DFN1006N/A2L | |
| ESDSLC3V3LB | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFN1006N/A2 | |
| ESDSLC3V3LB | JGN/ASEMI/台湾金锆 | 25+ | 83,121 | DFN1006N/A2L | |
| ESDSLC3V3LB | SXSEMIWD | 2026+PB | 900,000 | DFN2 | |
| ESDSLC3V3LB | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2 | |
| ESDSLC3V3LB | HXY MOSFET华轩阳电子 | 25+ | 68,000 | DFN1006N/A2L | |
| ESDSLC3V3LB | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | DFN1006N/A2L | |
| ESDSLC3V3LB | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2 | |
| ESDSLC3V3LB | YANGJIE/扬杰科技 | 21+ | 18,000 | DFN1006N/A2L | |
| ESDSLC3V3LB | CJ/长电 | 22+ | 60,600 | DFN | |
| ESDSLC3V3LB | ELECSUPER/静芯微 | 25+ | 135,000 | DFN1006N/A2L | |
| ESDSLC3V3LB | PLINGSEMIC/鹏领 | 25+ | 300,000 | DFN2 | |
| ESDSLC3V3LB | XN/APRYZ/芯湃半导体 | 2025+ | 300,000 | SOTN/A23 | |
| ESDSLC3V3LB | YANGJIE/扬杰科技 | 25+ | 55,000 | DFN1006N/A2L | |
| ESDSLC3V3LB | YANGJIE/扬杰科技 | 26+ | 3,000 | DFN1006 | |
| ESDSLC3V3LB | MICROCHIP/微芯 | 2239+ | 30,000 | DFN2 | |
| ESDSLC3V3LB | CNNPCHIP/新晶微 | 26+ | 335,600 | DFN1006 | |
| ESDSLC3V3LB | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| ESDSLC3V3LB | YANGJIE/扬杰科技 | 21+ | 21,000 | DFN1006N/A2L | |
| ESDSLC3V3LB-TP | MCC/美微科 | 21+ | 28,000 | SMD | |
| ESDSLC3V3LB-TP | MCC/美微科 | N/A | 90,000 | N/A | |
| ESDSLC3V3LB-TP | MCC/美微科 | 2025+PB | 15,000 | DFNN/A1006 | |
| ESDSLC3V3LB-TP | MCC/美微科 | 2024/4/9 | 5,849 | N/A | |
| ESDSLC3V3LB-TP | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| ESDSLC3V3LB-TP | MCC/美微科 | 25+ | 83,121 | DFN1006N/A2 | |
| ESDSLC3V3LB-TP | MCC/美微科 | 23+ | 51 | DFN1006 | |
| ESDSLC3V3LB-TP | MCC/美微科 | 25+ | 50,000 | DFN1006N/A2 | |
| ESDSLC3V3LB-TP | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| ESDSLC3V3LB-TP | HXY MOSFET华轩阳电子 | 25+ | 68,000 | DFN1006N/A2L | |
| ESDSLC3V3LB-TP | MCC/美微科 | 2026+ | 663,300 | DFN1006N/A2L | |
| ESDSLC3V3LB-TP | MCC/美微科 | N/A | 6,000 | DFN1006N/A2L/DFN1006N/A2 | |
| ESDSLC3V3LB-TP | MCC/美微科 | 2022+ | 53,200 | DFN1006N/A2 | |
| ESDSLC3V3LB-TP | MCC/美微科 | 20+ | 9,690 | DFN | |
| ESDSLC3V3LB-TP | MCC/美微科 | 25+ | 600,000 | ESD Suppressor Diode | |
| ESDSLC3V3LB-TP | MCC/美微科 | 2026+ | 236,600 | DFN1006N/A2L | |
| ESDSLC3V3LB-TP | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | DFN1006N/A2 | |
| ESDSLC3V3LB-TP | MCC/美微科 | 22+ | 90,000 | DFN1006N/A2 |
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