Results for ESDTU5V0AG4B(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ESDTU5V0AG4B | CJ/长晶/长电 | 2026+ | 663,300 | DFN2510N/A10L | |
| ESDTU5V0AG4B | CJ/长电 | 22+ | 108,300 | DFNWB2.5N/A1N/A10LN/AB | |
| ESDTU5V0AG4B | CJ/长晶 | 25+ | 51,000 | DFNWB2.5×1.0N/A10LN/AB | |
| ESDTU5V0AG4B | WENETE/韦能特 | 25+ | 120,000 | DFN2510 | |
| ESDTU5V0AG4B | CJ | N/A | 99,000 | DFNWBN/A10L(2.5x1) | |
| ESDTU5V0AG4B | CNNPCHIP/新晶微 | 26+ | 325,454 | DFNWB2.51.0N/A10LN/AB | |
| ESDTU5V0AG4B | XINGHEWEI | 25+ | 300,000 | DFN2510N/A10L | |
| ESDTU5V0AG4B | CJ | 26+ | 158,000 | DFNWB2.5x1N/A10L | |
| ESDTU5V0AG4B | CJ/长晶 | 2022+ | 53,200 | DFNWB2.5N/A1.0N/A10LN/AB | |
| ESDTU5V0AG4B | CJ/长电 | 21+ | 90,000 | N/A | |
| ESDTU5V0AG4B | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFNWB2.5x1N/A10L | |
| ESDTU5V0AG4B | CJ | 25+ | 1,000,000 | DFNWB2.5×1.0N/A10LN/AB | |
| ESDTU5V0AG4B | CJ/长晶 | 20201201/20210101/20 | 92,777 | N/A | |
| ESDTU5V0AG4B | LMSEMI/砺马 | 25+ | 89,722 | DFNWB2.51.0N/A10LN/AB | |
| ESDTU5V0AG4B | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN2510N/A10L | |
| ESDTU5V0AG4B | Semiteh elec | 26+ | 268,589 | DFNWB2.51. | |
| ESDTU5V0AG4B | CJ | 24+ | 381,000 | DFNWB2.5×1.0N/A10LN/AB | |
| ESDTU5V0AG4B | CJ/长晶 | 25+ | 100,000 | DFNWB2.5N/A101N/A10LN/AB | |
| ESDTU5V0AG4B | JGN/ASEMI/台湾金锆 | 26+ | 50,000 | DFN2510N/A10L | |
| ESDTU5V0AG4B | TINYSEMI/台半科技 | 25+ | 135,430 | DFNN/A2510 | |
| ESDTU5V0AG4B | SXSEMIWD | 2026+PB | 900,000 | DFN10 | |
| ESDTU5V0AG4B | CJ/长晶 | 2025+ | 60,000 | DFNWB2.51N/A10L | |
| ESDTU5V0AG4B | MSV/萌盛微 | 26+ | 500,000 | DFN2510 | |
| ESDTU5V0AG4B | CNNPCHIP/新晶微 | 26+ | 125,677 | DFN2510N/A10L | |
| ESDTU5V0AG4B | 江苏长电/长晶 | 2026+ | 60,000 | DFNWB2.51N/A10L | |
| ESDTU5V0AG4B | CJ/长晶 | 25+ | 333,210 | DFNWB2.5X1.0N/A10LN/AB | |
| ESDTU5V0AG4B | QDON/启迪半导体 | 25+ | 359,346 | DFNWB2.5×1N/A10L | |
| ESDTU5V0AG4B | CJ/长晶 | 25+ | 181,630 | DFN2510 | |
| ESDTU5V0AG4B | SXSEMI/瞬芯半导体 | 2026+PB | 900,000 | DFN2510 | |
| ESDTU5V0AG4B | CJ/长晶 | 26+ | 333,000 | DFNWB2.5N/A1.0N/A10L |
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