Results for IS61WV51216EEBLL-10BLI(17)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 2017 | 500 | SMD | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 2017 | 500 | SMD | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 26+ | 10,000 | N/A | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 1945+ | 480 | TFBGAN/A48 | |
| IS61WV51216EEBLL-10BLI | INTEGRATEDSILICONSOLUTION | N/A | 480 | N/A | |
| IS61WV51216EEBLL-10BLI | ISSI/香港仓 | 23+ | 6,000 | QFN | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 20+ | 5,000 | SMT | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 24+ | 30,000 | N/A | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 23+ | 9,000 | N/A | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 23+ | 10,000 | N/A | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 21+ | 10 | BGA48 | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 17+ | 6 | BGA48 | |
| IS61WV51216EEBLL-10BLI | 美国芯成 | 21+ | 401 | N/A | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 25+ | 5,000 | N/A | |
| IS61WV51216EEBLL-10BLI | ISSIIntegratedSiliconSolutionInc | 16+ | 4,225 | 48N/ATFBGA6x8 | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 25+ | 2,880 | SRAM Chip Async Dual | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 26+ | 10,000 | TFBGAN/A48 |
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