Results for NCV2333DR2G(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| NCV2333DR2G | ONSEMI/安森美 | 25+ | 30,000 | N/A | |
| NCV2333DR2G | ONSEMI/安森美 | 2025+ | 30,000 | SOICN/A8 | |
| NCV2333DR2G | ONSEMI/安森美 | 23+ | 50,000 | SOICN/A8 | |
| NCV2333DR2G | TUDI/钍地 | 26+ | 75,350 | SOP8 | |
| NCV2333DR2G | TUDI/钍地 | 26+ | 75,350 | SOP8 | |
| NCV2333DR2G | ONSEMI/安森美 | 25+ | 30,000 | N/A | |
| NCV2333DR2G | TUDI/钍地 | 26+ | 75,350 | SOP8 | |
| NCV2333DR2G | ONSEMI/安森美 | 2025+ | 30,000 | SOPN/A8 | |
| NCV2333DR2G | ONSEMI/安森美 | 26+ | 100,000 | SOICN/A8 | |
| NCV2333DR2G | TUDI/钍地 | 26+ | 75,350 | SOP8 | |
| NCV2333DR2G | ONSEMI/安森美 | 25+ | 90,000 | N/A | |
| NCV2333DR2G | ON有12121 | 2323 | 82,566,602 | SOPN/A8 | |
| NCV2333DR2G | ONSEMI/安森美 | 23+ | 33,000 | 8N/ASOIC | |
| NCV2333DR2G | ONN/欧恩 | 26+ | 236,086 | N/A | |
| NCV2333DR2G | TUDI/钍地 | 26+ | 75,350 | SOP8 | |
| NCV2333DR2G | ONSEMI/安森美 | 21+ | 15,700 | SOP8 | |
| NCV2333DR2G | ONSEMI/安森美 | N/A | 12,920 | N/A | |
| NCV2333DR2G | ONSEMI/安森美 | 25+ | 15,000 | SOP8 | |
| NCV2333DR2G | TUDI/钍地 | 26+ | 75,350 | SOP8 | |
| NCV2333DR2G | ONSEMI/安森美 | 23+ | 15,000 | NA | |
| NCV2333DR2G | ONSEMI/安森美 | 23+ | 50,000 | SOICN/A8 | |
| NCV2333DR2G | ONSEMI/安森美 | 25+ | 45,000 | SOICN/A8 | |
| NCV2333DR2G | WDJ/微电晶 | 2022+ | 20,000 | SOPN/A8 | |
| NCV2333DR2G | ONSEMI/安森美 | 25+ | 78,566 | SOPN/A8 | |
| NCV2333DR2G | ONSEMI/安森美 | 26+ | 12,120 | SOP8 | |
| NCV2333DR2G | ONSEMI/安森美 | 26+ | 12,120 | SOP8 | |
| NCV2333DR2G | ONSEMI/安森美 | 26+ | 58,000 | SOICN/A8 | |
| NCV2333DR2G | TBWSEMI/台半微 | 26+ROHS | 4,750,000 | SOPN/A8 | |
| NCV2333DR2G | ONSEMI/安森美 | 25+ | 30,000 | N/A | |
| NCV2333DR2G | ON/香港仓 | 23+ | 60,000 | QFN |
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