Results for PESDNC2FD12VU(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| PESDNC2FD12VU | PRISEMI/芯导 | 25+ | 88,888 | DFN1006N/A2L | |
| PESDNC2FD12VU | CNNPCHIP/新晶微 | 26+ | 335,600 | DFN1006 | |
| PESDNC2FD12VU | PRISEMI/芯导 | 2025+ | 50,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | PRISEMI/芯导 | 2026+ | 663,300 | DFN1006N/A2L | |
| PESDNC2FD12VU | PRISEMI/芯导 | 25+ | 300,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | PRISEMI/芯导 | 22+ | 158,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | PRISEMI/芯导 | 25+ | 83,121 | DFN1006N/A2L | |
| PESDNC2FD12VU | PRISEMI/芯导 | 26+ | 118,680 | DFN1006N/A2L | |
| PESDNC2FD12VU | PRISEMI/芯导 | 22+ | 60,600 | DFN1006N/A2L | |
| PESDNC2FD12VU | PRISEMI/芯导 | 25+ | 51,000 | DFNN/A1006N/A2L | |
| PESDNC2FD12VU | TSD/泰盛达 | 26+ | 300,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | CNNPCHIP/新晶微 | 26+ | 122,654 | DFN1006N/A2L | |
| PESDNC2FD12VU | TSD/泰盛达 | 26+ | 30,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | PRISEMI/芯导 | 2026+PB | 900,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | PRISEMI/芯导 | 2025+ | 163,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | ELECSUPER/静芯微 | 25+ | 78,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | 芯导 PRISEMI | 22+ | 141,000 | N/A | |
| PESDNC2FD12VU | PRISEMI/芯导 | 26+ | 158,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | PRISEMI/芯导 | 26+ | 117,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | PRISEMI/芯导 | 2026+ | 236,600 | DFN1006N/A2L | |
| PESDNC2FD12VU | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | SEMITEH/胜敏特 | 26+ | 865,815 | DFN1006N/A2L | |
| PESDNC2FD12VU | PRISEMI/芯导 | 22+ | 37,104 | SOD | |
| PESDNC2FD12VU | PRISEMI/芯导 | 21+ | 100,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | TINYSEMI/台半科技 | 25+ | 300,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | PRISEMI/芯导 | 2022+ | 40,000 | DFN1006 | |
| PESDNC2FD12VU | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | XINGHEWEI | 25+ | 300,000 | DFN1006N/A2L | |
| PESDNC2FD12VU | PRISEMI/芯导 | 21 | 100,000 | SMD |
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