Results for PESDNC2XD3V3B(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| PESDNC2XD3V3B | PRISEMI/芯导 | 26+ | 158,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 23+ | 999,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | HXY MOSFET华轩阳电子 | 25+ | 68,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 2026+ | 236,600 | DFN0603N/A2L | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 25+ | 390,000 | N/A | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 26+ | 118,680 | DFN0603N/A2L | |
| PESDNC2XD3V3B | SHUNTAI | 25+ | 1,800,000 | DFN0603 | |
| PESDNC2XD3V3B | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 26+ | 117,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 25+ | 88,888 | DFN0603N/A2L | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 2025+ | 163,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 26+ | 100,000 | DFN0603N/A2 | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 25+ | 150,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 2026+ | 663,300 | DFN0603N/A2L | |
| PESDNC2XD3V3B | XINGHEWEI | 25+ | 300,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 23+ | 150,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | CNNPCHIP/新晶微 | 26+ | 335,600 | DFN0603 | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 2026+PB | 900,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | CNNPCHIP/新晶微 | 26+ | 330,800 | DFN0603N/A2L | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 21+ | 100,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 22+ | 70,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | DFN1006N/A2L | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 25+ | 995,890 | DFN0603N/A2L | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 25+ | 300,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 25+ | 800,000 | DFN1006N/A2L | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 22+ | 158,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | TINYSEMI/台半科技 | 25+ | 321,142 | DFNN/A0603 | |
| PESDNC2XD3V3B | PRISEMI/芯导 | 22+ | 70,000 | DFN0603N/A2L | |
| PESDNC2XD3V3B | ELECSUPER/静芯微 | 25+ | 123,000 | DFN0603N/A2L |
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