Results for PESDNC3D8VB(43)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| PESDNC3D8VB | PRISEMI/芯导 | 25+ | 10,000 | SOD323 | |
| PESDNC3D8VB | PRISEMI/芯导 | 25+ | 88,888 | SODN/A323 | |
| PESDNC3D8VB | MSV/萌盛微 | 26+ | 500,000 | SOD323 | |
| PESDNC3D8VB | PRISEMI/芯导 | 2025+ | 50,000 | SODN/A323 | |
| PESDNC3D8VB | PRISEMI/芯导 | 26+ | 158,000 | SODN/A323 | |
| PESDNC3D8VB | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| PESDNC3D8VB | TEN/AONG/拓能 | 2025+ | 1,803,000 | SODN/A323 | |
| PESDNC3D8VB | PRISEMI/芯导 | 2026+PB | 900,000 | SODN/A323 | |
| PESDNC3D8VB | CNNPCHIP/新晶微 | 26+ | 335,600 | SODN/A323 | |
| PESDNC3D8VB | PRISEMI/芯导 | 26+ | 117,000 | SODN/A323 | |
| PESDNC3D8VB | CNNPCHIP/新晶微 | 25+ | 900,000 | S0DN/A323 | |
| PESDNC3D8VB | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| PESDNC3D8VB | PRISEMI/芯导 | 2026+ | 663,300 | SODN/A323 | |
| PESDNC3D8VB | PRISEMI/芯导 | 26+ | 108,950 | SODN/A323 | |
| PESDNC3D8VB | PRISEMI/芯导 | 2025+ | 163,000 | SODN/A323 | |
| PESDNC3D8VB | Prisemi/Cnnpchip/新晶微 | 26+ | 955,634 | SODN/A323 | |
| PESDNC3D8VB | WENETE/韦能特 | 25+ | 120,000 | SOD323 | |
| PESDNC3D8VB | PRISEMI/芯导 | 21+ | 100,000 | SODN/A323 | |
| PESDNC3D8VB | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| PESDNC3D8VB | PRISEMI/芯导 | 22+ | 60,600 | SODN/A323 | |
| PESDNC3D8VB | PRISEMI/芯导 | 22+ | 158,000 | SODN/A323 | |
| PESDNC3D8VBL1 | PRISEMI/芯导 | 21+ | 100,000 | SODN/A323 | |
| PESDNC3D8VBL1 | CNNPCHIP/新晶微 | 26+ | 335,600 | SODN/A323 | |
| PESDNC3D8VBL1 | PRISEMI/芯导 | 22+ | 37,067 | SOD | |
| PESDNC3D8VBL1 | PRISEMI/芯导 | 26+ | 118,680 | SODN/A323 | |
| PESDNC3D8VBL1 | PRISEMI/芯导 | 26+ | 117,000 | SODN/A323 | |
| PESDNC3D8VBL1 | PRISEMI/芯导 | 2026+PB | 900,000 | SODN/A323 | |
| PESDNC3D8VBL1 | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | SODN/A323 | |
| PESDNC3D8VBL1 | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| PESDNC3D8VBL1 | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| PESDNC3D8VBL1 | PRISEMI/芯导 | 25+ | 83,121 | SODN/A323 | |
| PESDNC3D8VBL1 | PRISEMI/芯导 | 2025+ | 163,000 | SODN/A323 | |
| PESDNC3D8VBL1 | PRISEMI/芯导 | 2025+ | 50,000 | SODN/A323 | |
| PESDNC3D8VBL1 | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| PESDNC3D8VBL1 | PRISEMI/芯导 | 23+ | 150,000 | SODN/A323 | |
| PESDNC3D8VBL1 | PRISEMI/芯导 | 22+ | 158,000 | SODN/A323 | |
| PESDNC3D8VBL1 | PRISEMI/芯导 | 25+ | 88,888 | SODN/A323 | |
| PESDNC3D8VBL1 | PRISEMI/芯导 | 24+ | 880,000 | SODN/A323 | |
| PESDNC3D8VBL1 | Prisemi/Cnnpchip/新晶微 | 26+ | 955,630 | SODN/A323 | |
| PESDNC3D8VBL1 | PRISEMI/芯导 | 22+ | 60,600 | SODN/A323 | |
| PESDNC3D8VBL1 | PRISEMI/芯导 | 26+ | 158,000 | SODN/A323 | |
| PESDNC3D8VBL1 | CNNPCHIP/新晶微 | 25+ | 900,000 | S0DN/A323 | |
| PESDNC3D8VBL1 | TEN/AONG/拓能 | 2025+ | 1,803,000 | SODN/A323 |
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