Results for SI2327DS-T1-GE3(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| Si2327DS-T1-GE3 | VISHAY/威世 | 2025+ | 36,000 | SOTN/A23 | |
| Si2327DS-T1-GE3 | VISHAY/威世 | 24+ | 33,600 | SOTN/A23 | |
| Si2327DS-T1-GE3 | NK/南科功率 | 2026+ROHS | 88,877 | SOTN/A23 | |
| Si2327DS-T1-GE3 | VISHAY/威世 | 22+ | 250,000 | SOTN/A23 | |
| Si2327DS-T1-GE3 | VISHAY/威世 | 2025+ | 122,556 | SOTN/A23 | |
| Si2327DS-T1-GE3 | VISHAY/威世 | 24+ | 48,600 | SOTN/A23 | |
| Si2327DS-T1-GE3 | VISHAY/威世 | 2025+ | 122,556 | SOTN/A23 | |
| Si2327DS-T1-GE3 | VISHAY/威世 | 25+ | 88,888 | SOTN/A23 | |
| Si2327DS-T1-GE3 | VISHAY/威世 | 2022+ | 40,000 | SOTN/A23 | |
| Si2327DS-T1-GE3 | VISHAY/威世 | 21+ | 60,000 | SOTN/A23 | |
| Si2327DS-T1-GE3 | VISHAY/威世 | 25+ | 32,530 | SOTN/A23 | |
| Si2327DS-T1-GE3 | VISHAY/威世 | 26+ | 96,580 | SOTN/A23 | |
| SI2327DS-T1-GE3 | VISHAY/威世 | 2025+ | 126,688 | SOTN/A23 | |
| SI2327DS-T1-GE3 | TY/台灣半導体 | 2618+ | 60,348 | SOTN/A23 | |
| SI2327DS-T1-GE3 | VISHAY/威世 | 25+ | 56,882 | SOTN/A23 | |
| SI2327DS-T1-GE3 | VISHAY/威世 | 25+ | 393,000 | N/A | |
| SI2327DS-T1-GE3 | VISHAY/威世 | 25+ | 699,999 | N/A | |
| SI2327DS-T1-GE3 | VISHAY/威世 | 25+ | 485,681 | SOTN/A23 | |
| SI2327DS-T1-GE3 | VISHAY/威世 | 23 | 32,500 | SOTN/A23 | |
| SI2327DS-T1-GE3 | VISHAY/威世 | 26+ | 1,500,000 | SOTN/A23 | |
| SI2327DS-T1-GE3 | VISHAY/威世 | 23 | 96,530 | SOTN/A23 | |
| SI2327DS-T1-GE3 | VISHAY/威世 | 21 | 86,500 | SOTN/A23 | |
| SI2327DS-T1-GE3 | VISHAY/威世 | 2025+ | 152,235 | SOTN/A23 | |
| SI2327DS-T1-GE3 | VISHAY/威世 | 22+ | 57,800 | SOTN/A23 | |
| SI2327DS-T1-GE3 | VISHAY/威世 | 24+ | 645,100 | SOTN/A23 | |
| SI2327DS-T1-GE3 | ZXV | 25+ | 90,000 | SOTN/A23N/A3(TON/A236) | |
| SI2327DS-T1-GE3 | SK/森浦科 | 24+ | 42,297 | SOTN/A23 | |
| SI2327DS-T1-GE3 | VISHAY/威世 | 25+PB | 58,748 | SOTN/A23 | |
| SI2327DS-T1-GE3 | VISHAY/威世 | 26+ | 332,520 | SOTN/A23N/A3(TON/A236) | |
| SI2327DS-T1-GE3 | VISHAY/威世 | 21+ | 40,000 | SOTN/A23 |
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