Results for Si2319DDS-T1-GE3(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| Si2319DDS-T1-GE3 | NK/南科功率 | 2026+ROHS | 88,877 | SOTN/A23 | |
| Si2319DDS-T1-GE3 | VISHAY/威世 | 26+ | 120,000 | SOTN/A23 | |
| Si2319DDS-T1-GE3 | VISHAY/威世 | 24+ | 96,980 | SOTN/A23 | |
| Si2319DDS-T1-GE3 | VISHAY/威世 | 24+ | 98,200 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | ZXV | 25+ | 90,000 | SOTN/A23N/A3(TON/A236) | |
| SI2319DDS-T1-GE3 | SK/森浦科 | 24+ | 58,800 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | HXY MOSFET华轩阳电子 | 25+ | 68,000 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | VISHAY/威世 | 25+ | 66,500 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | VISHAY/威世 | 2025+RoHS | 161,688 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | LMSEMI/砺马 | 25+ | 89,722 | SOTN/A23N/A3(TON/A236N/A3) | |
| SI2319DDS-T1-GE3 | VISHAY/威世 | 26+ | 1,500,000 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | INFINEON/英飞凌 | 23+ | 494,257 | TSDSON8 | |
| SI2319DDS-T1-GE3 | VISHAY/威世 | 25+ | 65,870 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | VISHAY/威世 | 25+ | 335,120 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | VISHAY/威世 | 2512+ | 58,800 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | VISHAY/威世 | N/A | 150,000 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | VISHAY/威世 | 20+ | 438,800 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | TY/台灣半導体 | 2618+ | 60,348 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | CQSIKIN/呈擎 | 26+ | 168,888 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | VISHAY/威世 | 22+ | 168,106 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | VISHAY/威世 | 26+ | 332,520 | SOTN/A23N/A3(TON/A236) | |
| SI2319DDS-T1-GE3 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | VISHAY/威世 | 25+ | 1,000,000 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | VISHAY/威世 | N/A | 600,000 | N/A | |
| SI2319DDS-T1-GE3 | VISHAY/威世 | 25+ | 267,800 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | SK/森浦科 | 24+ | 58,800 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | 台产 | 24+ | 888,891 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | VISHAY/威世 | 26+26+26+ | 100,000 | SOTN/A23N/A3(TON/A236) | |
| SI2319DDS-T1-GE3 | VISHAY/威世 | 23+ | 129,800 | SOTN/A23 | |
| SI2319DDS-T1-GE3 | COVASON/昌贯 | 25+ | 63,862 | SOT23N/A3 |
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