Results for Si2335DS-T1-GE3(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| Si2335DS-T1-GE3 | NK/南科功率 | 2026+ROHS | 88,877 | SOTN/A23 | |
| Si2335DS-T1-GE3 | VISHAY/威世 | 25+ | 88,888 | SOTN/A23 | |
| Si2335DS-T1-GE3 | VISHAY/威世 | 26+ | 96,580 | SOTN/A23 | |
| Si2335DS-T1-GE3 | VISHAY/威世 | 2025+ | 122,556 | SOTN/A23 | |
| Si2335DS-T1-GE3 | VISHAY/威世 | 2025+ | 122,556 | SOTN/A23 | |
| Si2335DS-T1-GE3 | VISHAY/威世 | 22+ | 250,000 | SOTN/A23 | |
| SI2335DS-T1-GE3 | YZ/VIS | 2023+ | 366,323 | SOTN/A23 | |
| SI2335DS-T1-GE3 | VISHAY/威世 | 25+ | 123,040 | SOTN/A23 | |
| SI2335DS-T1-GE3 | VISHAY/威世 | 23 | 96,530 | SOTN/A23 | |
| SI2335DS-T1-GE3 | SKSEMI/VIS | 24+ | 356,800 | SOTN/A23 | |
| SI2335DS-T1-GE3 | TY/台灣半導体 | 2618+ | 60,348 | SOTN/A23 | |
| SI2335DS-T1-GE3 | VISHAY/威世 | 2025+ | 126,688 | SOTN/A23 | |
| SI2335DS-T1-GE3 | VISHAY/威世/台产 | 26+ | 1,500,000 | SOTN/A23 | |
| SI2335DS-T1-GE3 | VISHAY/威世 | 2025+RoHS | 161,688 | SOTN/A23 | |
| SI2335DS-T1-GE3 | VISHAY/威世 | 26+ | 332,520 | SOTN/A23N/A3(TON/A236) | |
| SI2335DS-T1-GE3 | VISHAY/威世 | N/A | 150,000 | SOTN/A23 | |
| SI2335DS-T1-GE3 | VISHAY/威世 | 2025+ | 152,235 | SOTN/A23 | |
| SI2335DS-T1-GE3 | 国产 | 26+ | 86,203 | SOTN/A23 | |
| SI2335DS-T1-GE3 | VISHAY/威世 | 25+ | 68,500 | SOT23 | |
| SI2335DS-T1-GE3 | VISHAY/威世 | 25+ | 120,755 | SOTN/A23 | |
| SI2335DS-T1-GE3 | VISHAY/威世 | 21 | 86,500 | SOTN/A23 | |
| SI2335DS-T1-GE3 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | SOTN/A23 | |
| SI2335DS-T1-GE3 | CQSIKIN/呈擎 | 26+ | 168,888 | SOTN/A23 | |
| SI2335DS-T1-GE3 | VISHAY/威世 | 25+ | 65,870 | SOTN/A23 | |
| SI2335DS-T1-GE3 | YZ/VIS | 21+ | 366,323 | SOTN/A23 | |
| SI2335DS-T1-GE3 | VISHAY/威世 | 25+ | 156,000 | SOT23 | |
| SI2335DS-T1-GE3 | VISHAY/威世 | 25+ | 66,500 | SOTN/A23 | |
| SI2335DS-T1-GE3 | VISHAY/威世 | 25+ | 546,132 | SOTN/A23 | |
| SI2335DS-T1-GE3 | ZXV | 25+ | 90,000 | SOTN/A23 | |
| SI2335DS-T1-GE3 | VISHAY/威世 | 22+ | 121,000 | SOTN/A23 |
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