Results for TESD12G2B(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| TESD12G2B | SK/森浦科 | 24+ | 32,668 | SOTN/A23 | |
| TESD12G2B | TINYSEMI/台半科技 | 24+ | 118,488 | SOTN/A23 | |
| TESD12G2B | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| TESD12G2B | QNMICRO/全能微 | 25+ | 89,500 | SOT23N/A3 | |
| TESD12G2B | SPSEMI/瞬雷 | 26+ | 6,000 | N/A | |
| TESD12G2B | XINGHEWEI | 25+ | 300,000 | SOTN/A23 | |
| TESD12G2B | ELECSUPER/静芯微 | 25+ | 150,000 | SOTN/A23 | |
| TESD12G2B | SPSEMI/瞬雷 | 2022+ | 52,300 | SOTN/A23 | |
| TESD12G2B | SPSEMI/瞬雷 | 2023+ | 6,339 | SOTN/A23 | |
| TESD12G2B | MSV/萌盛微 | 26+ | 360,000 | SOTN/A23 | |
| TESD12G2B | SPSEMI/瞬雷 | 25+ | 63,000 | SOTN/A23 | |
| TESD12G2B | SPSEMI瞬雷 | 25+ | 900,000 | SOT23 | |
| TESD12G2B | WENETE/韦能特 | 25+ | 120,000 | SOTN/A23 | |
| TESD12G2B | SPSEMI/瞬雷 | 2026+PB | 900,000 | SOT23 | |
| TESD12G2B | BRIGHTKING/君耀 | 25+ | 100,000 | SOTN/A23 | |
| TESD12G2B | SPSEMI/瞬雷 | 2026+ | 236,600 | SOTN/A23 | |
| TESD12G2B | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | SOTN/A23 | |
| TESD12G2B | SPSEMI瞬雷 | 23+ | 999,000 | SOT23 | |
| TESD12G2B | Spsemi/Cnnpchip/新晶微 | 26+ | 330,800 | SOT23 | |
| TESD12G2B | 台产 | 25+ | 61,600 | SOTN/A23 | |
| TESD12G2B | SPSEMI/瞬雷 | 2025+ | 6,310 | SOTN/A23 | |
| TESD12G2B | SPSEMI瞬雷 | 23+ | 900,000 | SOT23 | |
| TESD12G2B | SPSEMI/瞬雷 | 26+ | 158,000 | SOTN/A23 | |
| TESD12G2B | SPSEMI/瞬雷 | 25+ | 9,000 | SOTN/A23 | |
| TESD12G2B | SPSEMI/瞬雷 | 25+ | 97,161 | SOTN/A23 | |
| TESD12G2B | CNNPCHIP/新晶微 | 26+ | 335,600 | SOT23 | |
| TESD12G2B | SXSEMIWD瞬芯 | 2025+PB | 900,000 | SOTN/A23 | |
| TESD12G2B | LITESEMI/厉特 | 22+ | 30,000 | SOT23 | |
| TESD12G2B | SPSEMI/瞬雷 | 2026+ | 663,300 | SOT23 | |
| TESD12G2B | SPSEMI/瞬雷 | 17+ | 3,000 | SOTN/A23 |
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