Results for TESD712G2B(30)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| TESD712G2B | SXSEMIWD瞬芯 | 2025+PB | 900,000 | SOTN/A23 | |
| TESD712G2B | SPSEMI瞬雷 | 17+ | 4,800 | SOTN/A23 | |
| TESD712G2B | TECHPUBLIC/台舟 | 25+ | 86,541 | SC70N/A6 | |
| TESD712G2B | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| TESD712G2B | BRIGHTKING/君耀 | 25+ | 100,000 | SOTN/A23 | |
| TESD712G2B | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| TESD712G2B | TECHPUBLIC/台舟 | 24+ | 13,522 | SC70N/A6 | |
| TESD712G2B | SPSEMI/瞬雷 | 26+ | 158,000 | SOTN/A23 | |
| TESD712G2B | SPSEMI/瞬雷 | 25+ | 36,152 | SOTN/A23 | |
| TESD712G2B | SPSEMI/瞬雷 | 2026+ | 663,300 | SOTN/A23 | |
| TESD712G2B | SPSEMI/瞬雷 | 2322+ | 17,059 | SOT23 | |
| TESD712G2B | TSD/泰盛达 | 26+ | 30,000 | SOTN/A23 | |
| TESD712G2B | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | SOTN/A23 | |
| TESD712G2B | CNNPCHIP/新晶微 | 25+ | 900,000 | SOTN/A23 | |
| TESD712G2B | SPSEMI/瞬雷 | 2322+ | 17,059 | SOT23 | |
| TESD712G2B | SPSEMI/瞬雷 | 25+ | 57,000 | SOTN/A23 | |
| TESD712G2B | SPSEMI/瞬雷 | 2025+ | 6,316 | SOTN/A23 | |
| TESD712G2B | SPSEMI/瞬雷 | 2026+PB | 900,000 | SOT23 | |
| TESD712G2B | SPSEMI/瞬雷 | 26+ | 60,000 | sotN/A23 | |
| TESD712G2B | Spsemi/Cnnpchip/新晶微 | 26+ | 123,007 | SOTN/A23 | |
| TESD712G2B | TINYSEMI/台半科技 | 25+ | 184,251 | SOTN/A23 | |
| TESD712G2B | SPSEMI/瞬雷 | 25+ | 12,000 | SOTN/A23 | |
| TESD712G2B | CNNPCHIP/新晶微 | 2026+ | 30,000 | SOTN/A23 | |
| TESD712G2B | QDON/启迪半导体 | 25+ | 365,044 | SOTN/A23 | |
| TESD712G2B | QNMICRO/全能微 | 25+ | 89,500 | SOT23N/A3 | |
| TESD712G2B | SPSEMI/瞬雷 | 2024+ | 3,000 | N/A | |
| TESD712G2B | SPSEMI/瞬雷 | 23+ | 12,000 | SOTN/A23 | |
| TESD712G2B | SPSEMI/瞬雷 | 2026+ | 236,600 | SOTN/A23 | |
| TESD712G2B | XINGHEWEI | 25+ | 300,000 | SOTN/A23 | |
| TESD712G2B | Semiteh elec | 26+ | 268,589 | SOTN/A23 |
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