Results for TSV612IDT(30)

Part NumberMFGD/CStockPackageAction
TSV612IDTLIGO SEMICONDUCTOR25+150,000SOPN/A8
TSV612IDTST/意法25+18,607SOP8
TSV612IDTMICROCHIP/微芯23+35,000SOICN/A8
TSV612IDTTUDI/钍地26+77,500SO70N/A5
TSV612IDTTUDI/钍地26+77,500SO70N/A5
TSV612IDTST/意法N/A132,500SOP8
TSV612IDTTUDI/钍地26+77,500SO70N/A5
TSV612IDTTUDI/钍地26+77,500SO70N/A5
TSV612IDTUMW/广东友台半导体25+300,000SOPN/A8
TSV612IDTUMW/广东友台半导体24+40,000SOPN/A8
TSV612IDTST/意法18+19+19,900SOP8
TSV612IDTST/意法23+24,000SON/A8
TSV612IDTST/意法23+20,230SOPN/A8
TSV612IDTST/意法24+26,727SOP8
TSV612IDTST/意法174435,000N/A
TSV612IDTST/意法25+20,000SOICN/A8
TSV612IDTST/意法2025+99,000SOPN/A8
TSV612IDTST/意法23+50,000SOP
TSV612IDTTUDI/钍地26+77,500SO70N/A5
TSV612IDTST/意法17+35,000N/A
TSV612IDTST/意法26+29,498SOP8
TSV612IDTST/意法2025+99,000SOPN/A8
TSV612IDTST/意法174435,000N/A
TSV612IDTST/意法25+61,600SOP8
TSV612IDTUMW/广东友台半导体25+44,860SOPN/A8
TSV612IDTST/意法N/A132,500SOP8
TSV612IDTST/意法23+33,0008N/ASOIC
TSV612IDTST/意法19+32,650SOPN/A8
TSV612IDTTUDI/钍地26+77,500SO70N/A5
TSV612IDTST/意法23+50,000SOP
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