Results for VESD03A1C-HD1(40)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| VESD03A1C-HD1 | VISHAY/威世 | 16+ | 7,338 | SODN/A882 | |
| VESD03A1C-HD1 | VISHAY/威世 | 25+ | 42,000 | LLP1006 | |
| VESD03A1C-HD1 | VISHAY/威世 | 23+ | 900,000 | LLP1006N/A2L | |
| VESD03A1C-HD1 | VISHAY/威世 | 2026+PB | 900,000 | LLP1006N/A2L | |
| VESD03A1C-HD1 | ELECSUPER/静芯微 | 25+ | 150,000 | LLP1006N/A2L | |
| VESD03A1C-HD1 | VISHAY/威世 | 25+ | 42,000 | LLP1006 | |
| VESD03A1C-HD1 | LITESEMI/厉特 | 22+ | 30,000 | LLP1006N/A2L | |
| VESD03A1C-HD1 | VISHAY/威世 | 2022+ | 52,300 | LLP1006N/A2L | |
| VESD03A1C-HD1 | VISHAY/威世 | 22+ | 60,600 | LLP1006N/A2L | |
| VESD03A1C-HD1 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| VESD03A1C-HD1 | Vishay/Cnnpchip/新晶微 | 26+ | 123,491 | DFN1006N/A2L | |
| VESD03A1C-HD1 | VISHAY/威世 | 26+ | 120,038 | DFN1006 | |
| VESD03A1C-HD1 | VISHAY/威世 | 16+ | 5,000 | SODN/A882 | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 25+ | 360,000 | 2012 | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | N/A | 168,000 | N/A | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 25+ | 10,560 | NA | |
| VESD03A1C-HD1-GS08 | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | LLP1006N/A2 | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 24+ | 70,000 | AXIAL | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 2026+ | 236,600 | DFN1006N/A2L | |
| VESD03A1C-HD1-GS08 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN1006N/A2L | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 26+ | 158,000 | DFN1006 | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 2012+ | 34,457 | LLPN/A1006 | |
| VESD03A1C-HD1-GS08 | QNMICRO/全能微 | 25+ | 89,500 | LLP1006N/A2L | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 25+ | 16,000 | N/A | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 14+ | 150 | LLP1006N/A2L | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 23+ | 360,000 | FBP02 | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 2022+ | 40,000 | LLP1006N/A2L | |
| VESD03A1C-HD1-GS08 | LMSEMI/砺马 | 25+ | 99,722 | LLP1006N/A2L | |
| VESD03A1C-HD1-GS08 | QDON/启迪半导体 | 25+ | 365,777 | LLP1006N/A2L | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 25+ | 400 | N/A | |
| VESD03A1C-HD1-GS08 | ZXV | 25+ | 90,000 | SODN/A923 | |
| VESD03A1C-HD1-GS08 | HXY MOSFET华轩阳电子 | 25+ | 68,000 | DFN1006N/A2L | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 25+ | 69,000 | LLPN/A1006N/A2L | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 19+ | 16,000 | LLP1006N/A2L | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 2025+PB | 15,000 | DFNN/A1006 | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 2026+ | 663,300 | DFN1006N/A2L | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | N/A | 50 | LLP1006N/A2 | |
| VESD03A1C-HD1-GS08 | JDT/集电通 | 25+ | 180,000 | LLP1006N/A2L | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 26+ | 88,000 | LLP1006N/A2L | |
| VESD03A1C-HD1-GS08 | VISHAY/威世 | 14+ | 400 | LLP1006N/A2L |
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