Results for ZVN2110G(49)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| ZVN2110G | DIODES INC. | 25+ | 6,895 | N/A | |
| ZVN2110G | ZETZX | 23+ | 11,200 | SOT223 | |
| ZVN2110G | DIODES/美台 | SOT-223 | 6,000 | 22+ | |
| ZVN2110G | DIODES/美台 | 23+ | 12,000 | SOT223 | |
| ZVN2110G | ZETEX | 25+ | 32,500 | SOT223 | |
| ZVN2110G | DIODES-美台 | 24+ | 83,500 | SOT223 | |
| ZVN2110G | 原装ZETEX | 19+ | 20,000 | SOT223 | |
| ZVN2110GTA | DIODEZTX | 25+ | 6,895 | SOT223 | |
| ZVN2110GTA | DIODES/美台 | 25+ | 41,812 | SOT223 | |
| ZVN2110GTA | DIODES/美台 | 25+ | 134 | SOT2233 | |
| ZVN2110GTA | ZETEX/DIODES | 最新 | 12,500 | SOT223 | |
| ZVN2110GTC | ZETEX/DIODES | 23+ | 50,000 | SOT2233 | |
| ZVN2110GTC | VBSEMI/台湾微碧 | 23+ | 50,000 | SOT2233 | |
| ZVN2110GTC | Diodes Incorporated | 25+ | 6,895 | SOT2233 | |
| ZVN2110GTAMOS(场效应管) | DIODES/美台 | 23+ | 50,000 | SOT223 | |
| ZVN2110GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 50,000 | SOT223 | |
| ZVN2110GTA | Diodes(美台) | 25+ | 500,000 | SOT2233 | |
| ZVN2110GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 10,046 | SOT223 | |
| ZVN2110GTAMOS(场效应管) | DIODES/美台 | 25+ | 15,389 | SOT223 | |
| ZVN2110GTAMOS | DIODES/美台 | 25+ | 90,000 | SOT223 | |
| ZVN2110GTA | ZET | 25+ | 400 | N/A | |
| ZVN2110GTC低压MOS管 | VBSEMI/台湾微碧 | 23+ | 50,000 | SOT2233 | |
| ZVN2110GTC | DIODES-美台 | 24+ | 78,800 | SOT223 | |
| ZVN2110GTAMOS(场效应管) | DIODES/美台 | 25+ | 15,389 | SOT223 | |
| ZVN2110GTA | 鑫远鹏 | 25+ | 5,000 | N/A | |
| ZVN2110GTAMOS(场效应管) | DIODES/美台 | 23+ | 2,000 | SOT223 | |
| ZVN2110GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 10,046 | SOT223 | |
| ZVN2110GTC | VBSEMI/台湾微碧 | 23+ | 10,087 | SOT2233 | |
| ZVN2110GTAMOS | DIODES/美台 | 25+ | 90,000 | SOT223 | |
| ZVN2110GTA | ZETEX | 25+ | 11,000 | N/A | |
| ZVN2110GTAMOS(场效应管) | DIODES/美台 | 23+ | 50,000 | SOT223 | |
| ZVN2110GTAMOS(场效应管) | DIODES/美台 | 23+ | 50,000 | SOT223 | |
| ZVN2110GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 50,000 | SOT223 | |
| ZVN2110GTC低压MOS管 | VBSEMI/台湾微碧 | 23+ | 50,000 | SOT2233 | |
| ZVN2110GTA | ZETEX | 25+ | 4,500 | SOT223 | |
| ZVN2110GTC低压MOS管 | VBSEMI/台湾微碧 | 23+ | 50,000 | SOT2233 | |
| ZVN2110GTC | DIODES-美台 | 24+ | 78,800 | SOT223 | |
| ZVN2110GTAMOS(场效应管) | DIODES/美台 | 25+ | 15,389 | SOT223 | |
| ZVN2110GTC | VBSEMI/台湾微碧 | 25+ | 90,000 | SOT2233 | |
| ZVN2110GTA | DIODES/美台 | 2511 | 360,000 | SOT223 | |
| ZVN2110GTA | DIODES | 1915+ | 257 | SOT223 | |
| ZVN2110GTAMOS(场效应管) | DIODES/美台 | 23+ | 2,000 | SOT223 | |
| ZVN2110GTA低压MOS管 | VBSEMI/台湾微碧 | 23+ | 10,046 | SOT223 | |
| ZVN2110GTC | VBSEMI/台湾微碧 | 23+ | 10,087 | SOT2233 | |
| ZVN2110GTA | DIODES/美台 | 22+ | 20,000 | SOT223 | |
| ZVN2110GTC | Diodes Incorporated | 25+ | 6,843 | SOT2233 | |
| ZVN2110GTAMOS | DIODES/美台 | 25+ | 90,000 | SOT223 | |
| ZVN2110GTA | DIODES/美台 | 2019+ | 78,550 | SOT223 | |
| ZVN2110GTC | Diodes Incorporated | 25+ | 6,843 | SOT2233 |