Results for ZVN3310FTA(49)

Part NumberMFGD/CStockPackageAction
ZVN3310FTADIODES/美台25+41,814SOT23
ZVN3310FTADiodes(美台)26+10,548SOT23
ZVN3310FTADIODES/美台25+918,000SOT23
ZVN3310FTADiodesN/A3N/A
ZVN3310FTADIODES/美台25+188,600SOT23
ZVN3310FTADiodes(美台)23+20,094N/A
ZVN3310FTADiodes Incorporated25+6,895N/A
ZVN3310FTADIODES-美台24+83,500SOT233
ZVN3310FTAZETEX2023+4,257SOT23
ZVN3310FTAZETEX23+50,000SOT23
ZVN3310FTADIODES/美台25+30,000N/A
ZVN3310FTADiodes(美台)25+18,000SOT
ZVN3310FTADIODES/美台23+50,000SOT23
ZVN3310FTADIODESN/A66,540SOT23
ZVN3310FTADIODES/美台2450+9,850SOT23
ZVN3310FTADiodes(美台)25+500,000SOT23
ZVN3310FTADIODES1851150,000SOT23
ZVN3310FTADIODES25+12,880SOT233
ZVN3310FTADiodes(美台)26+10,548SOT23
ZVN3310FTAMOSFET或IGBT开关ICZETEX新年份3,200SOT23
ZVN3310FTAMOS(场效应管)DIODES/美台2022+8,000SOT233
ZVN3310FTA低压MOS管VBSEMI/台湾微碧23+50,000SOT23
ZVN3310FTA-VBVBSEMI/微碧半导体25+90,000SOT23
ZVN3310FTAICZETEX23+8,470SOT23
ZVN3310FTAICZETEX25+90,000SOT23
ZVN3310FTAMOS(场效应管)DIODES/美台2019+PB66,540SOT23
ZVN3310FTA-VBVBSEMI/微碧半导体25+90,000SOT23
ZVN3310FTAMOS(场效应管)DIODES/美台23+50,000SOT23
ZVN3310FTAMOS(场效应管)DIODES/美台23+50,000SOT23
ZVN3310FTAMOS(场效应管)DIODES/美台新年份66,540SOT23
ZVN3310FTAICZETEX23+8,470SOT23
ZVN3310FTA-VBVBSEMI/微碧半导体25+90,000SOT23
ZVN3310FTAICZETEX23+50,000SOT23
ZVN3310FTAMOSFET或IGBT开关ICZETEX2019+PB3,200SOT23
ZVN3310FTAMOS(场效应管)DIODES/美台2022+8,000SOT233
ZVN3310FTA低压MOS管VBSEMI/台湾微碧23+50,000SOT23
ZVN3310FTAMOS(场效应管)DIODES/美台2022+8,000SOT233
ZVN3310FTAMOSFET或IGBT开关ICZETEX2019+PB3,200SOT23
ZVN3310FTAMOS(场效应管)DIODES/美台23+3,000SOT23
ZVN3310FTAMOS(场效应管)DIODES/美台2019+PB66,540SOT23
ZVN3310FTAICZETEX25+90,000SOT23
ZVN3310FTAICZETEX23+8,470SOT23
ZVN3310FTAICZETEX23+50,000SOT23
ZVN3310FTAMOS(场效应管)DIODES/美台新年份66,540SOT23
ZVN3310FTAMOSFET或IGBT开关ICZETEX2019+PB3,200SOT23
ZTL431AQFTAZTL432AFTAZVN3310FTADIODES/美台25+90,000N/A
ZTL431AQFTAZTL432AFTAZVN3310FTADIODES/美台25+90,000N/A
ZVN3310FTAMOSFET或IGBT开关ICZETEX2019+PB3,200SOT23
ZVN3310FTAICZETEX23+8,470SOT23