Results for 100N03(1,396)

Part NumberMFGD/CStockPackageAction
BSZ100N03MSGATMA1INFINEON/英飞凌23+30,300PGN/ATSDSONN/A8
BSZ100N03MSGATMA1IR/Infineon21+9,600N/A
BSZ100N03MSGATMA1INFINEON/英飞凌2396,530PGN/ATSDSONN/A8N/A21
BSZ100N03MSGATMA1INFINEON/英飞凌25+3,000DFN8
BSZ100N03MSGATMA1COVASON/昌贯25+56,3288N/APowerTDFN
BSZ100N03MSGATMA1INFINEON/英飞凌24163,622N/A
BSZ100N03MSGATMA1INFINEON/英飞凌23+9,000TSDSONN/A8
BSZ100N03MSGATMA1INFINEON/英飞凌23+5,000NA
BSZ100N03MSGATMA1Huaban Semi22+25,000N/A
BSZ100N03MSGATMA1INFINEON/英飞凌N/A104,409SMD
BSZ100N03MSGATMA1NK/南科功率2026+ROHS1,314,520DFN5X6
BSZ100N03MSGATMA1LMSEMI/砺马25+89,722TSDSONN/A8
BSZ100N03MSGATMA1INFINEON/英飞凌23+5,000N/A
BSZ100N03MSGATMA1NINEZERO26+60,600SMD
BSZ100N03MSGATMA1INFINEON/英飞凌24+23,893PQFN 3x3
BSZ100N03MSGATMA1INFINEON/英飞凌202219,000DFN5N/A6
BSZ100N03MSGATMA1INFINEON/英飞凌202549+21,002PQFN 3x3
BSZ100N03MSGATMA1INFINEON/英飞凌2023+12,000TSDSON
BSZ100N03MSGATMA1INFINEON/英飞凌22+5,000NA
BSZ100N03MSGATMA1INFINEON/英飞凌25+57,599PQFN
BSZ100N03MSGATMA1Infineon/英飞凌18/19+5,000OrignalSMT
CMP100N03CMOS/场效应半导体24+164TON/A220
CMP100N03JR25+52,310TON/A220
CMP100N03PERSEMI22+28,000TON/A220
CMP100N03mosfet17+3TO220
CMP100N03CMOS/场效应半导体2025+288TON/A220
CMP100N03N/A10+250TO220F
CMP100N03CMOS/场效应半导体25+68,500TO220
CMP100N03N/A22+1NA
CMP100N03CMOS/场效应半导体20+87,700TON/A220
CMP100N03XGT17+1NA
CMP100N03PERSEMI23+52,388TON/A220
CMP100N03N/A19+100TON/A220
CMP100N03CMOS/场效应半导体24+12,000TON/A220
CMP100N03VBSEMI/微碧半导体1825+18TON/A220
CMP100N03CMOS/场效应半导体25+2,000TON/A220
CMP100N03CMP2019+5TON/A220
CMP100N03CMOS/场效应半导体26+6,568TON/A220
CMS100N03H8-HFSK/森浦科24+368,000PDFN3x3(SPRN/APAK)
CMS100N03H8-HFJGN/ASEMI/台湾金锆25+60,000DFN5X6
CMS100N03H8-HFCOMCHIP/典琦202219,000DFN5N/A6
CMS100N03H8-HFCOMCHIP/典琦25+68,500DFN5X6
CMS100N03H8-HFCOMCHIP/典琦23+30,300DFN5x6
CMS100N03H8-HF国产2025+200,000DFN5x6PRN/APAK
CMS100N03H8-HFJGN/ASEMI/台湾金锆25+80,000DFN5X6
CMS100N03H8-HFCOVASON/昌贯25+56,3288N/APowerTDFN
CS100N03CRHJ/华晶14+50,000TON/A220
CS100N03CRHJ/华晶23+52,388TON/A252
CS100N03CRHJ/华晶24+6,111TON/A252
CS100N03CRMICRO/华润微25+986,000TO252
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