Results for 10A05(405)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| BDFN10A054U | ELECSUPER/静芯微 | 24+ | 111,000 | DFN2510N/A10L | |
| BDFN10A054U | 伯恩/NFSY | 2023+ | 60,000 | DFN10L | |
| BDFN10A054U | Semiteh elec | 26+ | 268,589 | DFNN/A10L | |
| BDFN10A054U | BORN/伯恩半导体 | 26+ | 166,000 | DFNN/A10L | |
| BDFN10A054U | TINYSEMI/台半科技 | 25+ | 126,345 | DFNN/A10 | |
| BDFN10A054U | BORN/伯恩半导体 | 24+ | 381,000 | DFNN/A10 | |
| BDFN10A054U | BORN/伯恩半导体 | 17+18+ | 67,057 | DFNN/A10 | |
| BDFN10A054U | BORN/伯恩半导体 | 25+ | 152,150 | DFN10L | |
| BDFN10A054U | 台产 | 25+ | 61,600 | DFNN/A10 | |
| BDFN10A054U | BORN/伯恩半导体 | 24+25+ | 100,000 | DFN10L | |
| BDFN10A056U1 | BORN/伯恩半导体 | 25+ | 83,121 | DFNN/A10L | |
| BDFN10A056U1 | TINYSEMI/台半科技 | 24+ | 70,412 | DFNN/A10 | |
| BDFN10A056U1 | BORN/伯恩半导体 | 25+ | 45,612 | DFN4120 | |
| BDFN10A056U1 | CNNPCHIP/新晶微 | 25+ | 900,000 | DFN4120N/A10L | |
| BDFN10A056U1 | BORN/伯恩半导体 | 2026+ | 236,600 | DFN4120N/A10L | |
| BDFN10A056U1 | TEN/AONG/拓能 | 2025+ | 1,803,000 | DFN4120 | |
| BDFN10A056U1 | BOURNS/伯恩斯 | 25+ | 50,000 | DFN4120N/A10 | |
| BDFN10A056U1 | JGN/ASEMI/台湾金锆 | 25+ | 231,000 | DFN10L | |
| BDFN10A056U1 | BORN/伯恩半导体 | 24+25+ | 100,000 | DFN4120 | |
| BDFN10A056U1 | BORN/伯恩半导体 | 23+ | 60,000 | DFN4210N/A | |
| BDFN10A056U1 | BORN/伯恩半导体 | 26+ | 189,990 | DFN10L | |
| BDFN10A056U1 | BORN伯恩 | 24+ | 60,000 | DFN4120 | |
| BDFN10A056U1 | BORN/Cnnpchip/新晶微 | 26+ | 122,410 | DFN4210N/A10L | |
| BDFN10A056U1 | LITESEMI/厉特 | 23+ | 999,000 | DFN4210N/A10L | |
| BDFN10A056U1 | 伯恩/NFSY | 2023+ | 60,000 | DFN4120 | |
| BDFN10A056U1 | CNNPCHIP/新晶微 | 26+ | 335,600 | DFN4120 | |
| BDFN10A056U1 | PLINGSEMIC/鹏领 | 23+ | 300,000 | DFN4210N/A10L | |
| BDFN10A056U1 | TSD/泰盛达 | 26+ | 30,000 | DFN4120N/A10 | |
| BDFN10A056U1 | BORN/伯恩半导体 | 25+ | 1,000,000 | SMD2 | |
| BDFN10A056U1 | TSD/泰盛达 | 26+ | 30,000 | DFN4120N/A10 | |
| BDFN10A056U1 | TSD/泰盛达 | 26+ | 30,000 | SODN/A323 | |
| BDFN10A056U1 | ZXWILL | 2022+ | 52,300 | DFN4210N/A10L | |
| BDFN10A056U1 | SXSEMIWD | 2026+PB | 900,000 | DFN4210N/A10L | |
| BDFN10A059U1 | SX/硕芯 | 23+ | 999,000 | DFN10 | |
| BDFN10A059U1 | BORN伯恩 | 25+ | 369,000 | DFNN/A10 | |
| BDFN10A059U1 | SX/硕芯 | 23+ | 900,000 | DFN10 | |
| BDFN10A059U1 | SXSEMIWD | 2026+PB | 900,000 | DFN10 | |
| BDFN10A059U1 | SK/森浦科 | 24+ | 40,467 | DFNN/A10 | |
| BDFN10A059U1 | NINEZERO | 26+ | 60,600 | SMD | |
| BDFN10A059U1 | ELECSUPER/静芯微 | 25+ | 15,000 | DFN10 | |
| BDFN10A059U1 | ZXWILL | 2022+ | 52,300 | DFN10 | |
| BDFN1610A052U | BORN伯恩 | 22+ | 38,540 | DFN1610N/A6L | |
| BDFN1610A052U | BORN/伯恩半导体 | 24+25+ | 100,000 | DFN1610N/A6L | |
| BDFN1610A052U | BORN/伯恩半导体 | 2026+ | 663,300 | DFN1610N/A6L | |
| BDFN1610A052U | TSD/泰盛达 | 26+ | 30,000 | DFN10L | |
| BDFN1610A052U | XINGHEWEI | 25+ | 300,000 | DFN1610N/A6L | |
| BDFN1610A052U | ZXWILL | 2022+ | 52,300 | DFN1610N/A6L | |
| BDFN1610A052U | SXSEMIWD | 2026+PB | 900,000 | DFN1610N/A6L | |
| BDFN1610A052U | 伯恩 | 23+ | 5,000 | N/A | |
| BDFN1610A052U | BORN/伯恩半导体 | 2026+ | 236,600 | DFN1610N/A6L |
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