Results for 20082(480)

Part NumberMFGD/CStockPackageAction
NCS20082DTBR2GTUDI/钍地26+888,500TSSOP
NCS20082DTBR2GONSEMI/安森美26+6,618FXSY
NCS20082DTBR2GONSEMI/安森美25+36,000N/A
NCS20082DTBR2GON有12121232382,566,602TSSOPN/A8
NCS20082DTBR2GONSEMI/安森美23+33,0008N/ATSSOP
NCS20082DTBR2GTUDI/钍地26+888,500TSSOP
NCS20082DTBR2GONSEMI/安森美19+504,236IC DUAL OPAMP LP RN/AR
NCS20082DTBR2GTUDI/钍地26+888,500TSSOP
NCS20082DTBR2GONSEMI/安森美26+58,000TSSOPN/A8
NCS20082DTBR2GONSEMI/安森美23+50,000TSSOP
NCS20082DTBR2GONSEMI/安森美24+20,000TSSOPN/A8
NCS20082DTBR2GONSEMI/安森美23+16,800MSOPN/A8
NCS20082DTBR2GONSEMI/安森美21+22+67,500N/A
NCS20082DTBR2GONSEMI/安森美25+18,499TSSOP8
NCS20082DTBR2GTUDI/钍地26+888,500TSSOP
NCS20082DTBR2GHXDZ/海芯电子25+10,000SOP
NCS20082DTBR2GTUDI/钍地26+888,500TSSOP
NCV20082DMR2GONSEMI/安森美2512+64,500MSOP8
NCV20082DMR2GINFINEON/英飞凌22+30,000N/A
NCV20082DMR2GONSEMI/安森美2530,000N/A
NCV20082DMR2GSK/森浦科24+64,500MSOP8
NCV20082DMR2GONSEMI/安森美25+45,000Micro8
NCV20082DMR2GONSEMI/安森美23+50,000Micro8
NCV20082DMR2GTUDI/钍地26+888,500MSOP
NCV20082DMR2GONSEMI/安森美26+43,385MSOP8
NCV20082DMR2GONSEMI/安森美25+30,000MSOP8
NCV20082DMR2GONSEMI/安森美2023+40,000MSOP8
NCV20082DMR2GTUDI/钍地26+888,500MSOP
NCV20082DMR2GONSEMI/安森美25+144,000N/A
NCV20082DMR2GTUDI/钍地26+888,500MSOP
NCV20082DMR2GSK/森浦科24+74,296MSOP8
NCV20082DMR2GTUDI/钍地26+888,500MSOP
NCV20082DMR2GTUDI/钍地26+888,500MSOP
NCV20082DMR2GONSEMI/安森美23+50,000Micro8
NCV20082DMR2GONSEMI/安森美25+18,547MSOP8
NCV20082DMR2GTUDI/钍地26+888,500MSOP
NCV20082DMR2GSK/森浦科24+64,500MSOP8
NCV20082DMR2GCOVASON/昌贯25+26,768MSOPN/A8
NCV20082DMR2GONSEMI/安森美23+33,0008N/AMSOP
NCV20082DMR2GONSEMI/安森美25+28,000Op Amp Dual GP RN/AR I
NCV20082DMR2GONSEMI/安森美24+26,667MSOP8
NCV20082DMR2GONSEMI/安森美26+58,000Micro8
NCV20082DMR2GONSEMI/安森美22+57,800MSOP8
NCV20082DMR2GON有12121232382,566,602MSOPN/A8
NCV20082DMR2GONSEMI/安森美2436+496,308Micro8MSOP8
NCV20082DMR2GONSEMI/安森美25+64,800SOP8
NCV20082DMR2GONSEMI/安森美25+18,000N/A
NCV20082DR2GONSEMI/安森美26+100,000SOICN/A8
NCV20082DR2GONSEMI/安森美23+50,000SOP
NCV20082DR2GONSEMI/安森美25+33,000SOICN/A8
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