Results for 20101(1,606)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| NSS20101JT1G | ONSEMI/安森美 | 25+ | 393,000 | N/A | |
| NSS20101JT1G | ONCHIP | 25+ | 900,000 | SOT523N/A3L | |
| NSS20101JT1G | ONChip | 2026+PB | 900,000 | SOT523N/A3L | |
| NSS20101JT1G | ONSEMI/安森美 | 25+ | 40,000 | N/A | |
| NSS20101JT1G | ONSEMI/安森美 | 18+ | 330,000 | SCN/A89 | |
| NSS20101JT1G | ONSEMI/安森美 | 2022+ | 40,000 | SCN/A89 | |
| NSS20101JT1G | ONSEMI/安森美 | 25+ | 60,000 | SCN/A89 | |
| NSS20101JT1G | ONSEMI/安森美 | 18+ | 330,000 | SCN/A89 | |
| NSS20101JT1G | ONSEMI/安森美 | 2023+ | 87,000 | DFNN/A8N/AEP(2x2) | |
| NSV20101JT1G | ONSEMI/安森美 | 22+ | 81,000 | SCN/A89N/A3 | |
| NSV20101JT1G | ONSEMI/安森美 | 25+ | 7,252 | SCN/A89N/A3 | |
| NSV20101JT1G | ONSEMI/安森美 | 23+ | 33,000 | SCN/A89N/A3 | |
| NSV20101JT1G | ONSEMI/安森美 | 25+ | 360,000 | SCN/A89N/A3 | |
| NSV20101JT1G | ONSEMI/安森美 | N/A | 66,000 | N/A | |
| NSV20101JT1G | NK/南科功率 | 2026+ROHS | 96,880 | SOTN/A89 | |
| NSV20101JT1G | ONSEMI/安森美 | 24+ | 54,000 | N/A | |
| NSV20101JT1G | ONSEMI/安森美 | 2025+ | 360,000 | SCN/A89N/A3 | |
| NSV20101JT1G | CQSIKIN/呈擎 | 26+ | 168,888 | SOTN/A89 | |
| NSV20101JT1G | ONSEMI/安森美 | 25+ | 54,000 | N/A | |
| NSV20101JT1G | ONSEMI/安森美 | 25+ | 360,000 | SCN/A89N/A3 | |
| NSV20101JT1G | ONSEMI/安森美 | 2025+RoHS | 4,000 | SOTN/A89 | |
| NSV20101JT1G | ONSEMI/安森美 | 2025+RoHS | 161,688 | SOTN/A89 | |
| NSV20101JT1G | ONSEMI/安森美 | 23+ | 18,000 | SCN/A89N/A3 | |
| PTB20101 | INFINEON/英飞凌 | 2017 | 550 | N/A | |
| PTB20101 | Infineon/英飞凌 | 03+ | 9 | N/A | |
| PTB20101 | ERICSSON/爱立信 | N/A | 455 | N/A | |
| PTB20101 | ERICSSON/爱立信 | 14+ | 1,249 | TON/A59 | |
| PTB20101 | ERICSSON/爱立信 | 09+ | 465 | N/A | |
| PTB20101 | Ericsson/爱立信 | 05+ | 100 | N/A | |
| PTB20101 | ERICSSON/爱立信 | N/A | 197 | TON/A62 | |
| PTB20101 | ERICSSON/爱立信 | 20+ | 1,632 | TON/A59 | |
| PTB20101 | ERICSSON/爱立信 | 15+ | 100 | N/A | |
| PTB20101 | ERICSSON/爱立信 | N/A | 105 | N/A | |
| PTB20101 | ERICSSON/爱立信 | 19+ | 6,000 | N/A | |
| RCA2010100RJNEF | VISHAY/威世 | 0724+ | 2,740 | R2010 | |
| RCA2010100RJNEF | VISHAY/威世 | 0722+ | 6,000 | SMD | |
| RCA2010100RJNEF | VISHAY/威世 | 07+ | 2,740 | 2010 | |
| S20101PRIC1 | MICROSEMI/美高森美 | 19+ | 33 | BGA | |
| S20101PRIC1 | APPLIED MICRO CIRCUITS CORPORATION | 19+ | 33 | FCBGA1155 | |
| S20101PRIC1 | ANALOG POWER/美商亚柏 | 20+ | 3 | BGA | |
| S20101PRIC1 | ANALOG POWER/美商亚柏 | 18+ | 70 | BGA | |
| S20101PRIC1 | ANALOG POWER/美商亚柏 | 18+ | 105 | FCBGA1155 | |
| S20101PRIC1 | APPLIED MICRO CIRCUITS CORPORATION | 18+ | 172 | FCBGA1155 | |
| S20101PRIC1 | ANALOG POWER/美商亚柏 | 11+ | 5,053 | N/A | |
| S20101PRIC1 | ANALOG POWER/美商亚柏 | 22+23+ | 180 | BGA | |
| SN1201019IRGCR | TI/德州仪器 | 19+ | 3 | QFN64 | |
| SN1201019IRGCR | TI/德州仪器 | 16+ | 26 | QFN64 | |
| SN1201019IRGCR | QFN64 | 11+ | 7,248 | QFN64 | |
| SN1201019IRGCR | TI/德州仪器 | 16+ | 26 | QFN64 | |
| SNSS20101JT1G | ONSEMI/安森美 | 2546+ | 83,500 | SMD |
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