Results for 20N06L(826)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| 20N06L | INFINEON/英飞凌 | 16+ | 1 | TO252 | |
| 20N06L | ONSEMI/安森美 | 1010+ | 5,258 | TON/A252 | |
| 20N06L | INF英飞凌 | 20040508 | 4,362 | SOTN/A252 | |
| 20N06L | MOTOROLA/摩托罗拉 | 22+ | 18,800 | TON/A252251 | |
| 20N06L | 国产 | 19+ | 47,000 | TON/A252 | |
| 20N06L | 昕晟微 | 22 | 100,000 | TO252 | |
| 20N06L | JRX/君瑞迅 | 25+ | 652,100 | TON/A252220 | |
| 20N06L | XGT | 17+ | 1 | NA | |
| 20N06L | SD | 25+ | 23,650 | TON/A252 | |
| 20N06L | Infineon/英飞凌 | 2020+ | 20,000 | SOT252 | |
| 20N06L | ONSEMI/安森美 | 23+ | 52,388 | TON/A252 | |
| 220N06L | 昕晟微 | 22 | 100,000 | TO252TO251 | |
| 220N06L | INFINEON/英飞凌 | 19+ | 22,950 | TO252 | |
| 220N06L | ROHM/罗姆 | 24+ | 5,268 | TON/A252 | |
| 220N06L | ROHM/罗姆 | 19+ | 100 | TO252 | |
| 220N06L | INFINEON/英飞凌 | N/A | 52 | TO252 | |
| 220N06L | INFINEON/英飞凌 | 20/22+ | 2,780 | TON/A252 | |
| 220N06L | INFINEON/英飞凌 | 23+ | 52,388 | TON/A252 | |
| 220N06L | INFINEON/英飞凌 | 21+ | 10,000 | TON/A252 | |
| BL1S20N06L-D8 | NK/南科功率 | 2026+ROHS | 6,969 | SOPN/A8 | |
| BL1S20N06L-D8 | NK/南科功率 | 2026+ROHS | 88,877 | SOPN/A8 | |
| BL1S20N06L-D8 | JGN/ASEMI/台湾金锆 | 25+ | 80,000 | SOPN/A8 | |
| BL1S20N06L-D8 | GALAXY/银河微 | 2025+ | 360,000 | SOPN/A8 | |
| BL1S20N06L-D8 | JGN/ASEMI/台湾金锆 | 25+ | 60,000 | SOPN/A8 | |
| BL1S20N06L-D8 | NK/南科功率 | 2026+ROHS | 58,888 | SOPN/A8 | |
| BL1S20N06L-D8 | COVASON/昌贯 | 25+ | 56,357 | SOPN/A8 | |
| BL1S20N06L-D8 | 银河微N/AGalaxy | 23+ | 40,200 | SOPN/A8 | |
| BL1S20N06L-D8 | GALAXY/银河微 | 2025+ | 30,000 | SOPN/A8 | |
| BL1S20N06L-D8 | GALAXY/银河微 | 2025+ | 360,000 | SOPN/A8 | |
| BL1S20N06L-D8 | 昕晟微 | 22 | 100,000 | SOPN/A8 | |
| CMD20N06L | PERSEMI | 22+ | 28,000 | TON/A252 | |
| CMD20N06L | 昕晟微 | 22 | 100,000 | SOTN/A252 | |
| CMD20N06L | CMD | 23+ | 1,000 | TON/A252 | |
| CMD20N06L | CMOS/场效应半导体 | 25+ | 68,500 | TO252 | |
| CMD20N06L | VBSEMI/微碧半导体 | 25+ | 5,000 | TON/A252 | |
| CMD20N06L | CMOS/场效应半导体 | 24+ | 51,000 | TON/A252 | |
| CMD20N06L | NK/南科功率 | 2025+ | 360,000 | TON/A252 | |
| CMD20N06L | CMD | 25+ | 10,000 | TON/A252 | |
| CMD20N06L | CMOS/场效应半导体 | 25+ | 20,000 | TON/A252 | |
| CMD20N06L | VBSEMI/微碧半导体 | 23+ | 52,388 | TON/A252 | |
| CMD20N06L | CMD | 1507+ | 1,178 | TO252 | |
| CMD20N06L | ACTIVEBABY | 26+ | 28,000 | TON/A252 | |
| CMD20N06L | 台湾CMD | 1412+ | 540 | TO252 | |
| CMD20N06L | CMOS/场效应半导体 | 24+ | 15,000 | TON/A252 | |
| CMD20N06L | CMD | 15+ | 2,850 | TON/A252 | |
| CMD20N06L | N/A | 22+ | 1 | NA | |
| CMD20N06L | CMD | 24+ | 25,802 | TON/A252 | |
| CMD20N06L | JR | 25+ | 52,310 | TON/A252 | |
| CMD20N06L | ACTIVE/台湾技领 | 24+ | 23,893 | TON/A252 | |
| CMD20N06L | VBSEMI/微碧半导体 | 21+ | 12 | TO252 |
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