Results for 30H100(648)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| FERD30H100SB-TR | ST/意法 | 22+ | 12,500 | TON/A252N/A3(DPAK) | |
| FERD30H100STS | ST/意法 | 23+ | 2,000 | N/A | |
| FERD30H100STS | ISC/无锡固电 | 26+ | 3,000 | TON/A220N/A3 | |
| FERD30H100STS | ST/意法 | 15+ | 75 | TON/A220 | |
| FERD30H100STS | ST/意法 | 15+ | 30 | TON/A220 | |
| FERD30H100STS | ST/意法 | N/A | 362 | TON/A220AB | |
| FERD30H100STS | ST/意法 | 2226 | 1,100 | N/A | |
| FERD30H100STS | ST/意法 | N/A | 1,000 | N/A | |
| FERD30H100STS | ST/意法 | 25+ | 400 | TON/A220N/A3 | |
| FERD30H100STS | ST/意法 | 25+ | 68,500 | TO220 | |
| FERD30H100STS | ST/意法 | 2341+ | 35 | TON/A220N/A3 | |
| FERD30H100STS | ST/意法 | 22+ | 36,000 | TO220 | |
| FERD30H100STS | ST/意法 | 1738+ | 25 | TON/A220 | |
| FERD30H100STS | ST/意法 | 22+ | 21,000 | N/A | |
| FERD30H100STS | ST/意法 | 15+ | 3 | TON/A220 | |
| FERD30H100STS | ST/意法 | 1805+ | 120 | TON/A220 | |
| FERD30H100STS | ST/意法 | 18+ | 498 | TON/A220 | |
| FERD30H100STS | ST/意法 | N/A | 15,000 | N/A | |
| FERD30H100STS | ST/意法 | 2237 | 500 | SMD | |
| FERD30H100STS | ST/意法 | 24+ | 60,555 | N/A | |
| FERD30H100STS | ST/意法 | 23+ | 52,388 | TON/A220 | |
| FERD30H100STS | ST/意法 | 18+ | 100 | ROHS | |
| FERD30H100STS | ST/意法 | 19+ | 5,000 | N/A | |
| FERD30H100STS | ST/意法 | 20+ | 2,940 | TON/A220 | |
| FERD30H100STS | ST/意法 | 2336 | 2,000 | N/A | |
| FERD30H100STS | ST/意法 | 21+ | 1,000 | N/A | |
| MBR30H100CT | GSI | 22+ | 15,800 | TON/A220 | |
| MBR30H100CT | DIODES/美台 | 25+ | 132,000 | N/A | |
| MBR30H100CT | ONSEMI/安森美 | 22+ | 43,000 | TON/A220 | |
| MBR30H100CT | TSC/台湾半导体 | 21+ | 32,565 | TON/A220 | |
| MBR30H100CT | ONSEMI/安森美 | 15+ | 36,688 | TON/A2203LEADSTANDA | |
| MBR30H100CT | ONSEMI/安森美 | 24+ | 23,680 | TON/A2203LEADSTANDA | |
| MBR30H100CT | ONSEMI/安森美 | 22+ | 15,000 | TON/A220 | |
| MBR30H100CT | ONSEMI/安森美 | 24+ | 38,658 | TON/A220 | |
| MBR30H100CT | ONSEMI/安森美 | 22+ | 32,365 | TON/A220 | |
| MBR30H100CT | LITEON/光宝 | 2018+ | 96,000 | TON/A220AB | |
| MBR30H100CT | SI Semi(深爱) | N/A | 90,000 | N/A | |
| MBR30H100CT | ONSEMI/安森美 | 22+ | 33,500 | TON/A220 | |
| MBR30H100CT | ONSEMI/安森美 | 23+ | 15,769 | TON/A263 | |
| MBR30H100CT | HXY MOSFET华轩阳电子 | 25+ | 68,000 | TON/A220C | |
| MBR30H100CT | ONSEMI/安森美 | 22+ | 50,000 | TON/A220 | |
| MBR30H100CT | VISHAY/威世 | 24+ | 68,200 | TON/A220 | |
| MBR30H100CT | ONSEMI/安森美 | 24+ | 10,192 | TON/A220 3 LEAD STANDA | |
| MBR30H100CT | TSC/台湾半导体 | N/A | 12,600 | N/A | |
| MBR30H100CT | HKZ/恒芯 | 23+ | 30,000 | 20A/30A100VHN/ASERSCH | |
| MBR30H100CT | N/A | N/A | 50,000 | TON/A220 | |
| MBR30H100CT | TSC/台湾半导体 | 24+ | 25,000 | TON/A220 | |
| MBR30H100CT | TAIWANSEMICONDUCTOR | 25+ | 46,000 | TO220 | |
| MBR30H100CT | VISHAY/威世 | 23+ | 21,368 | TON/A220 | |
| MBR30H100CT | VISHAY/威世 | 25+ | 68,500 | TO220 |
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