Results for 50N03(3,747)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| BSZ050N03MSGATMA1 | INFINEON/英飞凌 | 23+ | 12,225 | TSDSONN/A8 | |
| BSZ050N03MSGATMA1 | COVASON/昌贯 | 25+ | 67,682 | TSDSONN/A8 | |
| BSZ050N03MSGATMA1 | INFINEON/英飞凌 | N/A | 104,414 | SMD | |
| BSZ050N03MSGATMA1 | INFINEON/英飞凌 | 22+ | 5,000 | N/A | |
| BSZ050N03MSGATMA1 | COVASON/昌贯 | 25+ | 56,328 | 8N/APowerTDFN | |
| BSZ050N03MSGATMA1 | INFINEON/英飞凌 | 2238 | 12,558 | N/A | |
| BSZ050N03MSGATMA1 | Huaban Semi | 22+ | 25,000 | N/A | |
| BSZ050N03MSGATMA1 | INFINEON/英飞凌 | 21+ | 10,000 | SMD | |
| BSZ050N03MSGATMA1 | INFINEON/英飞凌 | 23 | 96,530 | PGN/ATSDSONN/A8N/A22 | |
| BSZ050N03MSGATMA1 | INFINEON/英飞凌 | 26+ | 22,222 | PGN/ATSDSONN/A8 FL | |
| BSZ050N03MSGATMA1 | INFINEON/英飞凌 | 24+ | 23,893 | PQFN 3x3 | |
| BSZ050N03MSGATMA1 | Infineon/英飞凌 | 19 | 65,555 | PGN/ATDSONN/A8 | |
| BSZ050N03MSGATMA1 | INFINEON/英飞凌 | 25+ | 57,596 | PQFN | |
| BSZ050N03MSGATMA1 | INFINEON/英飞凌 | 21+ | 9,800 | TSDSONN/A8 | |
| BSZ050N03MSGATMA1 | INFINEON/英飞凌 | 19 | 12,560 | PGN/ATSDSONN/A8 | |
| CJU50N03 | CJ/长电 | 16+ | 4,673 | TON/A252 | |
| CJU50N03 | TY/台灣半導体 | 2618+ | 30,348 | TON/A252 | |
| CJU50N03 | CJ/PJH | N/A | 364,024 | SOTN/A252N/A2L | |
| CJU50N03 | TY/台灣半導体 | 2618+ | 25,348 | TON/A252 | |
| CJU50N03 | CJ/长晶 | 25+ | 3,000 | TON/A252N/A2L | |
| CJU50N03 | HAMOS/汉姆 | 25+ | 30,000 | TO252 | |
| CJU50N03 | CJ/长电 | 21+ | 45,612 | TO252 | |
| CJU50N03 | CJ/长电 | 24+ | 5,000 | TON/A252 | |
| CJU50N03 | CJ/长晶 | 25+ | 50,000 | TON/A252 | |
| CJU50N03 | 江苏长电/长晶 | 2026+ | 60,000 | TON/A252N/A2L | |
| CMD50N03 | NK/南科功率 | 2026+ROHS | 989,898 | TON/A252 | |
| CMD50N03 | CMOS/场效应半导体 | 24+ | 25,000 | TON/A252 | |
| CMD50N03 | NK/南科功率 | 2025+ | 360,000 | TON/A252 | |
| CMD50N03 | FH/FSC | 25+ | 6,532,100 | TON/A220 | |
| CMD50N03 | CMD | 19+ | 150 | TON/A252 | |
| CMD50N03 | CMOS/场效应半导体 | 15+ | 409 | TON/A252 | |
| CMD50N03 | CMOS/场效应半导体 | 25+ | 20,000 | TON/A252 | |
| CMD50N03 | CMD50N03 | 20+ | 305,028 | TON/A252 | |
| CMD50N03 | CMOS/场效应半导体 | 1404+ | 678 | TON/A252 | |
| CMD50N03 | CMOS/场效应半导体 | 25+ | 68,500 | TO252 | |
| CMD50N03 | ACTIVE/台湾技领 | 24+ | 23,893 | TON/A252 | |
| CMD50N03 | PERSEMI | 22+ | 28,000 | TON/A252 | |
| CMD50N03 | ACTIVEBABY | 26+ | 28,000 | TON/A252 | |
| CMD50N03 | CMD | 23+ | 6,438 | TON/A252 | |
| CMD50N03 | CMOS/场效应半导体 | 23+ | 52,388 | TON/A252 | |
| CMP50N03 | SYFOREVER | 25+ | 60,600 | TON/A220 | |
| CMP50N03 | CMOS/场效应半导体 | 2025+ | 225 | TON/A220 | |
| CMP50N03 | CMOS/场效应半导体 | 25+ | 2,000 | TON/A220 | |
| CMP50N03 | CMOS/场效应半导体 | 24+ | 12,000 | TON/A220 | |
| CMP50N03 | CMOS/场效应半导体 | 25+ | 68,500 | TO220 | |
| CMP50N03 | CMOS/场效应半导体 | 23+ | 52,388 | TON/A220 | |
| CMP50N03 | JR | 25+ | 52,310 | TON/A220 | |
| CMP50N03 | CMOS/场效应半导体 | 24+ | 21,000 | TON/A220 | |
| CMP50N03 | CET/華瑞 | 17+ | 100 | TON/A220 | |
| CMP50N03 | PERSEMI | 22+ | 28,000 | TON/A220 |
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