Results for 51216(3,221)
| Part Number | MFG | D/C | Stock | Package | Action |
|---|---|---|---|---|---|
| IS61WV51216EDBLL-10TLI-TR | ISSI/芯成 | 2223 | 1,291 | SMD | |
| IS61WV51216EDBLL-10TLI-TR | ISSI/芯成 | 2546+ | 510 | TSOP44 | |
| IS61WV51216EDBLL-10TLI-TR | ISSI/芯成 | 25+ | 8,000 | QFN48 | |
| IS61WV51216EDBLL-10TLI-TR | ISSI/芯成 | 2604+ | 5,972 | TSOPN/AIIN/A44 | |
| IS61WV51216EDBLL-10TLI-TR | ISSI/芯成 | 26+ | 4,198 | TSOPN/AIIN/A44 | |
| IS61WV51216EDBLL-10TLI-TR | ISSI主做主推 | 2425+ | 10,000 | SOPDIPQFN | |
| IS61WV51216EDBLL-10TLI-TR | ISSI/芯成 | 20+21+ | 1,000 | N/A | |
| IS61WV51216EDBLL-10TLI-TR | ISSI/芯成 | 22+ | 796 | TSOP44 | |
| IS61WV51216EDBLL-10TLI-TR | ISSI/芯成 | 26+ | 4,800 | TSOP44 | |
| IS61WV51216EDBLL-10TLI-TR | ISSI/芯成 | 25+ | 11,588 | NA | |
| IS61WV51216EDBLL-10TLI-TR | ISSI/芯成 | 11+ | 5,006 | N/A | |
| IS61WV51216EDBLL-10TLI-TR | ISSI美国芯成 | 21+ | 5,000 | TSOPN/A44 | |
| IS61WV51216EDBLL-10TLI-TR | ISSI/芯成 | 25+ | 20,000 | TSOP44 | |
| IS61WV51216EDBLL-10TLI-TR | ISSI/芯成 | 2510+ | 701 | TSOP44 | |
| IS61WV51216EDBLL-8BLI | INTEGRATEDSILICONSOLUTION | N/A | 1,681 | N/A | |
| IS61WV51216EDBLL-8BLI | ISSI/芯成 | N/A | 4 | N/A | |
| IS61WV51216EDBLL-8BLI | ISSI/芯成 | N/A | 4 | N/A | |
| IS61WV51216EDBLL-8BLI | ISSI/芯成 | N/A | 205 | N/A | |
| IS61WV51216EDBLL-8BLI | ISSI/芯成 | 25+ | 10,800 | BGA48 | |
| IS61WV51216EDBLL-8BLI | ISSI/芯成 | 1732 | 66 | TFBGA48 | |
| IS61WV51216EDBLL-8BLI | ISSIIntegratedSiliconSolutionInc | 16+ | 4,225 | 48N/ATFBGA6x8 | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 24+ | 3,000 | TSOP44 | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 23+ | 3,000 | FBGA | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 1811 | 500 | SMD | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 24+ | 10,000 | TSOP2(44) | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 14+15+18+ | 113 | TSOP | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 11+ | 5,008 | N/A | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 22+ | 3,300 | TSOP44 | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 1408+ | 1,950 | TSSOP | |
| IS61WV51216EDBLL-8TLI | N/A | 2025 | 1 | N/A | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 24+ | 1 | TSOPN/A44 | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 1532+ | 5 | TSOP | |
| IS61WV51216EDBLL-8TLI | ISSIIntegratedSiliconSolutionInc | 16+ | 4,225 | 44N/ATSOPII | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 14+ | 4 | TSOP | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | N/A | 2,000 | TSSOP | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 25+ | 10,800 | TSOP44 | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 2018 | 8,918 | IS43TR16128DN/A125KBLI | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 22+ | 3,300 | TSOP44 | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 15+ | 149 | TSOP44 | |
| IS61WV51216EDBLL-8TLI | ISSI/芯成 | 14+ | 4 | TSOP | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 26+ | 10,000 | N/A | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 23+ | 10,000 | N/A | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 24+ | 30,000 | N/A | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 25+ | 2,880 | SRAM Chip Async Dual | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 2017 | 500 | SMD | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 23+ | 9,000 | N/A | |
| IS61WV51216EEBLL-10BLI | 美国芯成 | 21+ | 401 | N/A | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 26+ | 10,000 | TFBGAN/A48 | |
| IS61WV51216EEBLL-10BLI | ISSI/芯成 | 20+ | 5,000 | SMT | |
| IS61WV51216EEBLL-10BLI | INTEGRATEDSILICONSOLUTION | N/A | 480 | N/A |
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